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Highly Doped Single Crystal Al $_{\text{1}-\textit{x}}$ Sc $_{\textit{x}}$ N Bulk Acoustic Resonators for High-Frequency and Wideband Applications
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 卷号: PP, 期号: 99, 页码: 6329-6335
作者:
Congquan Zhou
;
Wentong Dou
;
Ruidong Qin
;
Jinghong Lu
;
Yumeng Yang
Adobe PDF(3103Kb)
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浏览/下载:80/2
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提交时间:2024/08/26
III-V semiconductor materials
Aluminum nitride
Resonators
Piezoelectric films
Stress
Surface roughness
Rough surfaces
Acoustic resonator
aluminum scandium (Sc) nitride
bulk acoustic wave (BAW) filter
cavity-embedded
single crystal
Dynamic Behavior of Above-Room-Temperature Robust Skyrmions in 2D Van der Waals Magnet
期刊论文
NANO LETTERS, 2024, 卷号: 24, 期号: 36, 页码: 11246-11254
作者:
Shi, Hanqing
;
Zhang, Jingwei
;
Xi, Yilian
;
Li, Heping
;
Chen, Jingyi
Adobe PDF(2474Kb)
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浏览/下载:228/3
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提交时间:2024/09/20
Accelerator magnets
Carrier mobility
Electron tube components
Ferromagnetic materials
Ferromagnetism
Hall effect
Hall effect devices
III-V semiconductors
Integrated circuits
Layered semiconductors
Magnetic semiconductors
Semiconductor alloys
Spin dynamics
Spintronics
Wide band gap semiconductors
Above room temperature
Current-driven
Current-driven dynamic
Dynamic behaviors
Ferromagnets
Skyrmions
Spin configurations
Two-dimensional
Two-dimensional ferromagnet fe3gate2
Van der Waal
Aluminum Nitride Thin Film Acousto-Optic Modulator based on Single-Phase Unidirectional Transducers
会议论文
2023 IEEE 23RD INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (NANO), Jeju City, Korea, Republic of, 2-5 July 2023
作者:
Yang Li
;
Haorui Ni
;
Tao Wu
Adobe PDF(2755Kb)
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浏览/下载:326/3
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提交时间:2023/10/07
Performance evaluation
Frequency modulation
Transducers
Optical design
Optical modulation
Optical films
III-V semiconductor materials
Interband transitions of InAs/AlAs Short-Period superlattices grown by molecular beam epitaxy
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2023, 卷号: 605
作者:
Yao, Lu
;
Wang, Wenyang
;
Yao, Jinshan
;
Lu, Kechao
;
Lu, Hong
Adobe PDF(1253Kb)
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浏览/下载:308/2
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提交时间:2023/03/10
luminum
Aluminum compounds
III-V semiconductors
Indium
Indium arsenide
Molecular beams
Optical properties
Semiconductor quantum wells
Spectroscopic ellipsometry
A1.
A3.
B1.
B2.
Inter-band transition
Molecular-beam epitaxy
Semiconducting ternary materials
Short period superlattice
Photoacoustic Imaging Based on Broadened Bandwidth Aluminum Nitride Piezoelectric Micromachined Ultrasound Transducers
期刊论文
IEEE SENSORS LETTERS;, 2023, 卷号: 7, 期号: 4
作者:
Adobe PDF(3645Kb)
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浏览/下载:482/6
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提交时间:2023/03/24
AlN PMUT
Aluminum nitride
Bandwidth
Broadened bandwidth
Endoscopic imaging
III-V semiconductor materials
Imaging
Multi frequency
Photoacoustic
Resonant frequency
Sensors
Signal resolution
InP-Based Extended-Short Wave Infrared Heterojunction Phototransistor
期刊论文
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2021, 卷号: 39, 期号: 14, 页码: 4814-4819
作者:
Zongheng Xie
;
Zhuo Deng
;
Jian Huang
;
Zhiyang Xie
;
Zhiqi Zhou
Adobe PDF(1321Kb)
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浏览/下载:285/4
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提交时间:2021/07/30
Dark current
Junctions
III-V semiconductor materials
Indium phosphide
Substrates
Electric fields
Phototransistors
Bandwidth
e-SWIR phototransistor
high gain
InGaAs
GaAsSb T2SLs
Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD
期刊论文
ELECTRONICS LETTERS, 2020, 卷号: 56, 期号: 15, 页码: 785-787
作者:
Yan Teng
;
Xiujun Hao
;
Yu Zhao
;
Qihua Wu
;
Xin Li
Adobe PDF(472Kb)
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浏览/下载:245/0
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提交时间:2020/09/01
MOCVD
dark conductivity
minority carriers
infrared detectors
semiconductor superlattices
semiconductor growth
III-V semiconductors
indium compounds
gallium compounds
etching
current density
photodetectors
photoconductivity
carrier lifetime
lateral diffusion length
minority carriers
metalorganic chemical vapour deposition
diffusion-limited behaviour
dark current density
shallow-etched pixels
photocurrent
size-dependent behaviour
superlattice materials
MOCVD
LWIR InAs-GaSb superlattice detectors
deeply-etched PNn device
temperature 80
0 K
voltage-0
1 V
InAs-GaSb
InP based SWIR dual-band photodetector
会议论文
2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR), ELECTR NETWORK, AUG 03-05, 2020
作者:
Zongheng Xie
;
Zhuo Deng
;
Baile Chen
Adobe PDF(252Kb)
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浏览/下载:283/1
|
提交时间:2021/06/11
Electric potential
Dual band
Photodetectors
III-V semiconductor materials
Indium phosphide
Substrates
Electrooptic effects
Narrowband Impedance Transformer With Extremely High Transformation Ratio of 200
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 11, 页码: 1820-1823
作者:
Anming Gao
;
Jie Zou
;
Tao Wu
Adobe PDF(951Kb)
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浏览/下载:518/8
|
提交时间:2019/11/27
Impedance
Aluminum nitride
III-V semiconductor materials
Micromechanical devices
Resonant frequency
Inductors
Narrowband
A Chip-Scale RF MEMS Gyrator via Hybridizing Lorentz-Force and Piezoelectric Transductions
会议论文
2019 IEEE 32ND INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS), Seoul, Korea (South), 27-31 Jan. 2019
作者:
Tao Wu
;
Ruochen Lu
;
Anming Gao
;
Cheng Tu
;
Tomás Manzaneque
Adobe PDF(1882Kb)
|
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浏览/下载:510/8
|
提交时间:2019/11/27
Gyrators
Electrodes
Micromechanical devices
Magnetic resonance
Aluminum nitride
III-V semiconductor materials
Magnetoelectric effects
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