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Ultralow detection limit and high sensitivity X-ray detector of high-quality MAPbBr
3
perovskite single crystals
期刊论文
JOURNAL OF MATERIALS CHEMISTRY A, 2024, 卷号: 12, 期号: 21, 页码: 12467-12474
作者:
Liu, Dong
;
Sun, Xue
;
Jiang, Li
;
Jiang, Xianyuan
;
Chen, Hao
Adobe PDF(1817Kb)
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收藏
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浏览/下载:324/0
|
提交时间:2024/05/20
Carrier lifetime
Perovskite
Photoelectricity
Single crystals
Vacuum evaporation
Auxiliary substances
Detection limits
High quality
High sensitivity
Impact of temperatures
Performance
Photoelectric performance
Photoelectric property
Single-crystal materials
X-ray detector
Perovskite Single Crystals by Vacuum Evaporation Crystallization
期刊论文
ADVANCED SCIENCE, 2024, 卷号: 11, 期号: 22
作者:
Liu, Dong
;
Jiang, Xianyuan
;
Wang, Hao
;
Chen, Hao
;
Lu, Ying-Bo
Adobe PDF(8288Kb)
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收藏
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浏览/下载:345/0
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提交时间:2024/04/12
Bromine compounds
Carrier lifetime
Crystal growth
Lead compounds
Single crystals
Vacuum evaporation
Condition
Constant temperature
Full widths at half maximums
High quality
Low pressures
Multicrystals
Optoelectronics property
Performance
Perovskite single crystal
Trap state density
Ligand Engineering in Tin-Based Perovskite Solar Cells
期刊论文
NANO-MICRO LETTERS, 2023, 卷号: 15, 期号: 1
作者:
Li, Peizhou
;
Cao, Xiangrong
;
Li, Jingrui
;
Jiao, Bo
;
Hou, Xun
Adobe PDF(3780Kb)
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收藏
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浏览/下载:1194/213
|
提交时间:2023/07/21
Carrier lifetime
Carrier mobility
Cell engineering
Conversion efficiency
Crystal orientation
Defect engineering
Ligands
Perovskite solar cells
Solar power generation
Tin compounds
Toxicity
Band-gap structures
Commercialisation
Film fabrication
Large-scale applications
Lead-Free
Lead-free perovskites
Ligand engineering
Low toxicity
Photovoltaics
Power conversion efficiencies
Smooth and Compact FASnI3Films for Lead-Free Perovskite Solar Cells with over 14% Efficiency
期刊论文
ACS ENERGY LETTERS, 2022, 卷号: 7, 期号: 6
作者:
Zhu, Zihao
;
Jiang, Xianyuan
;
Yu, Danni
;
Yu, Na
;
Ning, Zhijun
Adobe PDF(3521Kb)
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收藏
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浏览/下载:663/4
|
提交时间:2022/06/24
Carrier lifetime
Crystallization kinetics
Efficiency
Lead compounds
Open circuit voltage
Perovskite
Textures
Tin compounds
Bifunctional ligand
Charge carrier lifetime
Crystal grains
Film quality
Halide perovskites
Lead-free perovskites
Open-circuit voltages
Optoelectronics property
Theoretical limits
Tin halides
Evaluation of lateral diffusion length in InAs/GaSb superlattice detectors grown by MOCVD
期刊论文
ELECTRONICS LETTERS, 2020, 卷号: 56, 期号: 15, 页码: 785-787
作者:
Yan Teng
;
Xiujun Hao
;
Yu Zhao
;
Qihua Wu
;
Xin Li
Adobe PDF(472Kb)
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收藏
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浏览/下载:245/0
|
提交时间:2020/09/01
MOCVD
dark conductivity
minority carriers
infrared detectors
semiconductor superlattices
semiconductor growth
III-V semiconductors
indium compounds
gallium compounds
etching
current density
photodetectors
photoconductivity
carrier lifetime
lateral diffusion length
minority carriers
metalorganic chemical vapour deposition
diffusion-limited behaviour
dark current density
shallow-etched pixels
photocurrent
size-dependent behaviour
superlattice materials
MOCVD
LWIR InAs-GaSb superlattice detectors
deeply-etched PNn device
temperature 80
0 K
voltage-0
1 V
InAs-GaSb
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