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Layer-dependent magnon-magnon coupling in a synthetic antiferromagnet
期刊论文
PHYSICAL REVIEW APPLIED, 2024, 卷号: 21, 期号: 5
作者:
Rong, Yaqi
;
Jiang, Chengxin
;
Wang, Huishan
;
Sun, Lu
;
Liu, Fengyu
Adobe PDF(1992Kb)
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收藏
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浏览/下载:374/13
|
提交时间:2024/06/07
Antiferromagnetic materials
Anticrossings
Coupling strengths
Even layers
Hybridisation
Layer number
Optical modes
Quantum computing systems
Quasiparticles
Resonance spectrum
Synthetic antiferromagnets
Influence of Localized Hot Carrier Degradation in DSOI Device Operating in MOSFET and BJT Modes
会议论文
2024 8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM), Bangalore, India, 3-6 March 2024
作者:
Yijun Qian
;
Yuan Gao
;
Amit Kumar Shukla
;
Tao Wu
;
Zhiqiang Mu
Adobe PDF(1028Kb)
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浏览/下载:324/4
|
提交时间:2024/05/17
Hot carrier degradation
DSOI
MOSFET
BJT
Highly Doped Single Crystal Al $_{\text{1}-\textit{x}}$ Sc $_{\textit{x}}$ N Bulk Acoustic Resonators for High-Frequency and Wideband Applications
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 卷号: PP, 期号: 99, 页码: 6329-6335
作者:
Congquan Zhou
;
Wentong Dou
;
Ruidong Qin
;
Jinghong Lu
;
Yumeng Yang
Adobe PDF(3103Kb)
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浏览/下载:80/2
|
提交时间:2024/08/26
III-V semiconductor materials
Aluminum nitride
Resonators
Piezoelectric films
Stress
Surface roughness
Rough surfaces
Acoustic resonator
aluminum scandium (Sc) nitride
bulk acoustic wave (BAW) filter
cavity-embedded
single crystal
3.3 GHz BAW Resonators Fabricated on Single Crystal AlN Templates
会议论文
2023 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS), Montreal, QC, Canada, 3-8 Sept. 2023
作者:
Qin, Ruidong
;
Zhou, Congquan
;
Dou, Wentong
;
Lu, Jinghong
;
Yang, Yumeng
Adobe PDF(1684Kb)
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收藏
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浏览/下载:203/1
|
提交时间:2024/01/19
Single crystal
aluminum nitride (AlN)
thin film
bulk acoustic wave (BAW)
resonator
Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET
期刊论文
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2023, 卷号: 11, 页码: 319-324
作者:
Yijun Qian
;
Qiang Liu
;
Jialun Yao
;
Xiaowei Wang
;
Amit Kumar Shukla
Adobe PDF(4964Kb)
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收藏
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浏览/下载:442/2
|
提交时间:2023/06/30
High electron mobility transistors
III-V semiconductors
Leakage currents
MOSFET devices
Silicon on insulator technology
Aging compensation
Back bias
Biasing techniques
Forward back biasing technique
Hot carrier degradation
MOS-FET
MOSFETs
Off-state leakage current
Performances evaluation
Silicon-on-insulator MOSFETs
In Situ Synchrotron XRD Characterization of Piezoelectric Al1−xScxN Thin Films for MEMS Applications
期刊论文
MATERIALS;, 2023, 卷号: 16, 期号: 5
作者:
Jiang, Wenzheng
;
Zhu, Lei
;
Chen, Lingli
;
Yang, Yumeng
;
Yu, Xi
Adobe PDF(3774Kb)
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收藏
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浏览/下载:998/495
|
提交时间:2023/03/24
aluminum scandium nitride
micro-electromechanical system
piezoelectric coefficient
substrate clamping effect
synchrotron XRD
Junctionless nanosheet gate-all-around transistors fabricated on void embedded silicon on insulator substrate
期刊论文
ELECTRONICS LETTERS, 2023, 卷号: 59, 期号: 4
作者:
Mu, Zhiqiang
;
Zhou, Hongyang
;
Yang, Yumeng
;
Liu, Qiang
;
Wei, Xing
Adobe PDF(962Kb)
|
收藏
|
浏览/下载:209/0
|
提交时间:2023/03/15
nanofabrication
semiconductor device manufacture
silicon-on-insulator
transistors
Structure of the priming arabinosyltransferase AftA required for AG biosynthesis of Mycobacterium tuberculosis
期刊论文
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES (PNAS), 2023
作者:
Gong YC(龚宜诚)
;
Wei CC(魏传存)
;
Wang J(王俊)
;
Mu NJ(穆能江)
;
Lu QH(陆芹洪)
Adobe PDF(3991Kb)
|
收藏
|
浏览/下载:273/8
|
提交时间:2023/11/21
Analysis of Abnormal GIDL Current Degradation Under Hot Carrier Stress in DSOI-MOSFETs
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 卷号: 69, 期号: 11
作者:
Qian, Yijun
;
Gao, Yuan
;
Shukla, Amit Kumar
;
Sun, Lu
;
Zou, Xinbo
Adobe PDF(3370Kb)
|
收藏
|
浏览/下载:513/1
|
提交时间:2022/10/08
Stress
Logic gates
MOSFET
Electron traps
Degradation
Hot carriers
Market research
Gate-induced drain leakage (GIDL) current
hot carrier stress (HCS)
parasitic bipolar transistor (PBT)
Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2022, 卷号: 43, 期号: 11, 页码: 1-1
作者:
Liu, Qiang
;
Zhou, Hongyang
;
Jia, Xin
;
Yang, Yumeng
;
Mu, Zhiqiang
Adobe PDF(2468Kb)
|
收藏
|
浏览/下载:262/0
|
提交时间:2022/11/04
Hardening
Ionizing radiation
MOSFET devices
Radiation effects
Radiation hardening
Radiation shielding
Silicon on insulator technology
Threshold voltage
MOS-FET
MOSFETs
Radiation hardening (electronic)
Radiation hardening (electronics)
Radiation immunity
Silicon on insulator
Total Ionizing Dose
Total ionizing dose hardening
Void embedded silicon on insulator
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