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| Dynamic Characteristics of Neutral Beam Etching Enabled Normally-off Recessed-gate GaN MOSHEMT 期刊论文
POWER ELECTRONIC DEVICES AND COMPONENTS, 2025, 卷号: 11
作者: Yitai zhu ; Haitao Du; Yu Zhang; Haolan Qu; Haodong Jiang
 Microsoft Word(2182Kb) |  收藏 | 浏览/下载：66/1 | 提交时间：2025/03/07
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| Ion Beam Etching Enabled Recessed-Gate E-mode GaN MOS-HEMT with FOM of 701 MW·cm-2 and Monolithic Integrated Digital Circuit 会议论文
ASIA-PACIFIC WORKSHOP ON WIDEGAP SEMICONDUCTORS, Busan,Korea, 2024.10.13-2024.10.17
作者: Han Gao; Yitian Gu; Yitai Zhu; Wenbo Ye; Xinbo Zou
Adobe PDF(422Kb) | 收藏 | 浏览/下载：292/12 | 提交时间：2024/09/27
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| Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment 期刊论文
MICROELECTRONICS JOURNAL, 2024, 卷号: 148
作者: Zhu, Yitai; Zhang, Yu; Qu, Haolan; Gao, Han; Du, Haitao
Adobe PDF(4805Kb) | 收藏 | 浏览/下载：311/3 | 提交时间：2024/06/11
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| AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing 期刊论文
APL MACHINE LEARNING, 2024
作者: Chen JX(陈嘉祥); Du HT(杜海涛); Qu HL(屈昊岚); Gao H(高涵); Gu YT(顾怡恬)
Adobe PDF(8964Kb) | 收藏 | 浏览/下载：194/10 | 提交时间：2024/09/13 |
| Electrical Characterization of β-Ga2O3 Power Diodes for Cryogenic Temperature Applications 会议论文
2024 THE 18TH NATIONAL CONFERENCE ON MOCVD (MOCVD)
作者: Qu, Haolan; Chen, Jiaxiang; Zhu, Yitai; Lu, Xing; Zhang, David Wei
收藏 | 浏览/下载：171/0 | 提交时间：2024/12/01 |
| Investigation of interface and bulk traps in ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors 会议论文
2024 THE 18TH NATIONAL CONFERENCE ON MOCVD (MOCVD)
作者: Qu, Haolan; Chen, Jiaxiang; Sui, Jin
收藏 | 浏览/下载：118/0 | 提交时间：2024/12/01 |
| Small $\textit{V}_{\text{th}}$ Shift and Low Dynamic $\textit{R}_{\textsc{on}}$ in GaN MOSHEMT With ZrO $_{\text{2}}$ Gate Dielectric 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 卷号: PP, 期号: 99, 页码:
5590-5595
作者: Yu Zhang; Yitian Gu; Jiaxiang Chen; Yitai Zhu
Adobe PDF(1973Kb) | 收藏 | 浏览/下载：187/1 | 提交时间：2023/10/07
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