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Controllable magnetism and an anomalous Hall effect in (Bi
1-
x
Sb
x
)
2
Te
3
-intercalated MnBi
2
Te
4
multilayers
期刊论文
NANOSCALE, 2025, 卷号: 17, 期号: 11, 页码: 6562-6569
作者:
Chen, Peng
;
Liu, Jieyi
;
Zhang, Yifan
;
Huang, Puyang
;
Bollard, Jack
Adobe PDF(2091Kb)
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浏览/下载:59/2
|
提交时间:2025/03/03
Antiferromagnetic materials - Antiferromagnetism - Bismuth compounds - Ferromagnetic materials - III-V semiconductors - Nanocrystals - Quantum Hall effect - Topological insulators
Anomalous hall effects - Electrical characterization - Insertion layers - Magnetic characterization - Magnetic interlayers - Magneto-transport response - Molecular-beam epitaxy - Property - Spacer layer - Topological insulators
Tunable interfacial Rashba spin-orbit coupling in asymmetric AlxIn1−xSb/InSb/CdTe quantum well heterostructures
期刊论文
APPLIED PHYSICS LETTERS, 2025, 卷号: 126, 期号: 1
作者:
Zhi, Zhenghang
;
Wu, Yuyang
;
Ruan, Hanzhi
;
Liu, Jiuming
;
Huang, Puyang
Adobe PDF(2896Kb)
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浏览/下载:89/4
|
提交时间:2025/02/12
Cadmium alloys
Cadmium telluride
Gallium phosphide
Heterodyning
Heterojunctions
Indium phosphide
Narrow band gap semiconductors
Selenium compounds
Semiconducting aluminum compounds
Semiconducting antimony compounds
Semiconducting cadmium compounds
Semiconducting gallium compounds
Semiconducting indium phosphide
Semiconductor quantum wells
Silicon compounds
Spin orbit coupling
Spintronics
Band bendings
CdTe
Molecular-beam epitaxy
Quantum confinement effects
Quantum-well heterostructure
Rashba spin-orbit coupling
Rashba-type spin-orbit
Spin-orbit couplings
Tunables
Two-dimensional
Tunable interfacial Rashba spin-orbit coupling in asymmetric Al
x
In
1-x
Sb/InSb/CdTe quantum well heterostructures
期刊论文
APPLIED PHYSICS LETTERS, 2025, 卷号: 126, 期号: 1
作者:
Ruan, Hanzhi
;
Zhi, Zhenghang
;
Wu, Yuyang
;
Liu, Jiuming
;
Huang, Puyang
Adobe PDF(1233Kb)
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浏览/下载:385/3
|
提交时间:2024/09/02
A Wide-Temperature-Range 4th-harmonic Noise Cancellation 6.8-7.6GHz VCO with 206dBc/Hz (4.2K) and 195dBc/Hz (298K) FoM
会议论文
2025 IEEE EUROPEAN SOLID-STATE ELECTRONICS RESEARCH CONFERENCE (ESSERC)
作者:
Hu, Yongqi
;
Huang, Jue
;
Ning, Chenkang
;
He, Chang
;
Xin, Yue
Adobe PDF(5812Kb)
|
收藏
|
浏览/下载:32/5
|
提交时间:2025/03/31
Field-Free Rashba-Type Crystal Torque MRAM with High Efficiency and Thermal Stability
会议论文
2024 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), San Francisco, CA, USA, 7-11 Dec. 2024
作者:
Puyang Huang
;
Shan Yao
;
Aitian Chen
;
Zhenghang Zhi
;
Chenyi Fu
Adobe PDF(1990Kb)
|
收藏
|
浏览/下载:53/0
|
提交时间:2025/03/03
Crystal symmetry
Diluted magnetic semiconductors
Dynamic random access storage
Electromagnetic induction
Magnetic core storage
Magnetic recording
Magnetic tape storage
MRAM devices
Semiconducting indium phosphide
Static random access storage
System-on-chip
A-stable
CdTe
High thermal
Higher efficiency
Magnetic random access memory
Metal systems
Rashba spin-orbit coupling
Spin orbits
Switching scheme
Write currents
Integrated Artificial Neural Network with Trainable Activation Function Enabled by Topological Insulator-Based Spin-Orbit Torque Devices
期刊论文
ACS NANO, 2024, 卷号: 18, 期号: 43
作者:
Huang, Puyang
;
Liu, Xinqi
;
Xin, Yue
;
Gu, Yu
;
Lee, Albert
Adobe PDF(1834Kb)
|
收藏
|
浏览/下载:532/16
|
提交时间:2023/09/24
spin-orbit torque
anomalous Hall effect
topological insulator
van der Waals ferromagnet
artificial neural network
Observation of Moment-Dependent and Field-Driven Unidirectional Magnetoresistance in CoFeB/InSb/CdTe Heterostructures
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2024, 卷号: 16, 期号: 34
作者:
Liu, Jiuming
;
Liao, Liyang
;
Rong, Bin
;
Wu, Yuyang
;
Ruan, Hanzhi
Adobe PDF(3652Kb)
|
收藏
|
浏览/下载:408/15
|
提交时间:2024/09/02
semiconductor heterostructures
unidirectional magnetoresistance
spin-orbit coupling
Rashba effect
spintronic devices
Enhancement of Voltage-Controlled Magnetic Anisotropy in Orthogonally-Magnetized CoFeB/MgO/CoFeB
会议论文
2024 IEEE INTERNATIONAL MAGNETIC CONFERENCE - SHORT PAPERS (INTERMAG SHORT PAPERS), Rio de Janeiro, Brazil, 5-10 May 2024
作者:
Puyang Huang
;
Aitian Chen
;
Xinyu Cai
;
Di Wu
;
Xi-Xiang Zhang
Adobe PDF(365Kb)
|
收藏
|
浏览/下载:338/2
|
提交时间:2024/07/08
Capacitance
Cobalt compounds
Iron compounds
Magnesia
Magnetic recording
MRAM devices
Anisotropy coefficients
Anisotropy effect
Circuit modeling
High-speed low-power
Interfacial capacitance
Magnetic tunneling junctions
Negative interfacial capacitance
Optimisations
Voltage-controled magnetic anisotropy effect
Voltage-controlled
无权访问的条目
学位论文
作者:
黄浦阳
Adobe PDF(27754Kb)
|
收藏
|
浏览/下载:1/0
|
提交时间:2025/02/01
A noise-tolerant, resource-saving probabilistic binary neural network implemented by the SOT-MRAM compute-in-memory system
预印本
2024
作者:
Gu, Yu
;
Huang, Puyang
;
Chen, Tianhao
;
Fu, Chenyi
;
Chen, Aitian
Adobe PDF(4358Kb)
|
收藏
|
浏览/下载:373/2
|
提交时间:2024/05/15
Probabilistic binary neuron network
random weight matrix
spin-orbit-torque
computing-in-memory
noise-tolerance
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