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Emission and Capture Characteristics of Electron Trap (Eemi = 0.8eV) in Si-doped β-Ga2O3 Epilayer 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 卷号: 38, 期号: 1, 页码: 015001
作者:  Qu, Haolan;  Chen, Jiaxiang;  Zhang, Yu;  Sui, Jin;  Gu, Yitian
Adobe PDF(796Kb)  |  收藏  |  浏览/下载：397/0  |  提交时间：2022/11/08
Investigation of a minority carrier trap in a NiO/β-Ga2O3p–n heterojunction via deep-level transient spectroscopy 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 卷号: 38, 期号: 10, 页码: 105010
作者:  Qu, Haolan;  Chen, Jiaxiang;  Zhang, Yu;  Sui, Jin;  Zhang, Ruohan
Adobe PDF(999Kb)  |  收藏  |  浏览/下载：274/0  |  提交时间：2023/09/23
Neutron Irradiation Induced Carrier Removal and Deep-Level Traps in N-Gan Schottky Barrier Diodes 会议论文
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC 2023), Shanghai, China, 26-27 June 2023
作者:  Jin Sui;  Jiaxiang Chen;  Haolan Qu;  Ruohan Zhang;  Min Zhu
Adobe PDF(753Kb)  |  收藏  |  浏览/下载：294/1  |  提交时间：2023/09/23
High-resolution relaxometry-based calibrated fMRI in murine brain: Metabolic differences between awake and anesthetized states 期刊论文
JOURNAL OF CEREBRAL BLOOD FLOW AND METABOLISM, 2022
作者:  Xu, Mengyang;  Bo, Binshi;  Pei, Mengchao;  Chen, Yuyan;  Shu, Christina Y.
Adobe PDF(1605Kb)  |  收藏  |  浏览/下载：834/1  |  提交时间：2021/12/13
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