|
已选(0)清除
条数/页： 排序方式：
|
| Neutral Beam Etching Enabled Recessed-Gate Emode GaN MOSHEMT: A Multi-Vth Power Device Platform for All-GaN Monolithic Integration 会议论文
INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS
作者: Han Gao ; Yitian Gu; Yudong Li; Xuanling Zhou; Haodong Jiang
 Adobe PDF(1101Kb) |  收藏 | 浏览/下载：41/3 | 提交时间：2025/03/03
|
| 1.48-dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Argon-Based Neutral Beam Etching for LNA Applications 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2025, 卷号: PP, 期号: 99
作者: Wenbo Ye; Junmin Zhou; Han Gao; Haowen Guo; Yitian Gu
Adobe PDF(1674Kb) | 收藏 | 浏览/下载：64/4 | 提交时间：2025/02/12
|
| 1.48 dB-Noise Figure E-Mode Recessed-Gate GaN MOSHEMT by Neutralized Ion Beam Etching for LNA Applications 会议论文
THE 11TH ASIA-PACIFIC WORKSHOP ON WIDEGAP SEMICONDUCTORS, Busan, Korea, October 13-17, 2024
作者: Wenbo Ye; Junmin Zhou; Han Gao
Adobe PDF(197Kb) | 收藏 | 浏览/下载：11/0 | 提交时间：2025/04/02 |
| Ion Beam Etching Enabled Recessed-Gate E-mode GaN MOS-HEMT with FOM of 701 MW·cm-2 and Monolithic Integrated Digital Circuit 会议论文
ASIA-PACIFIC WORKSHOP ON WIDEGAP SEMICONDUCTORS, Busan,Korea, 2024.10.13-2024.10.17
作者: Han Gao; Yitian Gu; Yitai Zhu; Wenbo Ye; Xinbo Zou
Adobe PDF(422Kb) | 收藏 | 浏览/下载：285/12 | 提交时间：2024/09/27
|
| AlGaN/GaN MOS-HEMT Enabled Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing 期刊论文
APL MACHINE LEARNING, 2024
作者: Chen JX(陈嘉祥); Du HT(杜海涛); Qu HL(屈昊岚); Gao H(高涵); Gu YT(顾怡恬)
Adobe PDF(8964Kb) | 收藏 | 浏览/下载：188/10 | 提交时间：2024/09/13 |
| Nonlinear Capacitance Compensation Method for Integrating a Metal-Semiconductor-Metal Varactor with a Gallium Nitride High Electron Mobility Transistor Power Amplifier 期刊论文
ELECTRONICS, 2024, 卷号: 13, 期号: 7
作者: Li, Ke; Gu, Yitian; Guo, Haowen; Zou, Xinbo
Adobe PDF(9388Kb) | 收藏 | 浏览/下载：264/0 | 提交时间：2024/05/14
|
| LoCI-DiffCom: Longitudinal Consistency-Informed Diffusion Model for 3D Infant Brain Image Completion 会议论文
MEDICAL IMAGE COMPUTING AND COMPUTER ASSISTED INTERVENTION - MICCAI 2024, PT II, Palmeraie Conf Ctr,Marrakesh,MOROCCO, OCT 06-10, 2024
作者: Zihao Zhu; Tianli Tao; Yitian Tao; Haowen Deng; Xinyi Cai
Adobe PDF(4119Kb) | 收藏 | 浏览/下载：336/13 | 提交时间：2024/09/20
|
| 545-mA/mm E-mode Recessed-Gate GaN MOSHEMT (Vth > 4V) by Ion Beam Etching 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2024, 卷号: PP, 期号: 99, 页码:
1-1
作者: Han Gao; Yitian Gu; Yu Zhang; Jialun Li; Junmin Zhou
Adobe PDF(2787Kb) | 收藏 | 浏览/下载：233/1 | 提交时间：2024/04/16
|
| Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric 期刊论文
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2024, 卷号: PP, 期号: 99, 页码:
1-1
作者: Yu Zhang; Renqiang Zhu; Haolan Qu; Yitian Gu; Huaxing Jiang
Adobe PDF(1470Kb) | 收藏 | 浏览/下载：268/0 | 提交时间：2024/06/11
|
| Generalizable Transformer-based Automatic MRI Quality Control for Infant Brain Imaging 会议论文
INTERNATIONAL SOCIETY FOR MAGNETIC RESONANCE IN MEDICINE (ISMRM2024)
作者: Haowen Deng; Gaofeng Wu; Zhu Zihao; Zhuoyang Gu
Adobe PDF(720Kb) | 收藏 | 浏览/下载：115/2 | 提交时间：2024/11/27 |
