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Highly Efficient Spin-Orbit Torque Switching in a Topological Insulator/Chromium Telluride Heterostructure with Opposite Berry Curvature
期刊论文
ADVANCED ELECTRONIC MATERIALS, 2025
作者:
Zhang, Kewen
;
Wu, Yuhang
;
Song, Jingyan
;
Guo, Yitian
;
Cai, Xiaolun
Adobe PDF(3274Kb)
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收藏
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浏览/下载:42/0
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提交时间:2025/02/28
Aluminum arsenide
Electric insulators
Layered semiconductors
Magnetic shape memory
Spin Hall effect
Spin orbit coupling
Topological insulators
'current
Anomalous hall effects
Berry curvature
Bi-layer
Chromium tellurides
Energy efficient
Magnetization switching
Spin orbits
Spin-orbit torque
Topological insulators
Field-Free Rashba-Type Crystal Torque MRAM with High Efficiency and Thermal Stability
会议论文
2024 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), San Francisco, CA, USA, 7-11 Dec. 2024
作者:
Puyang Huang
;
Shan Yao
;
Aitian Chen
;
Zhenghang Zhi
;
Chenyi Fu
Adobe PDF(1990Kb)
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浏览/下载:53/0
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提交时间:2025/03/03
Crystal symmetry
Diluted magnetic semiconductors
Dynamic random access storage
Electromagnetic induction
Magnetic core storage
Magnetic recording
Magnetic tape storage
MRAM devices
Semiconducting indium phosphide
Static random access storage
System-on-chip
A-stable
CdTe
High thermal
Higher efficiency
Magnetic random access memory
Metal systems
Rashba spin-orbit coupling
Spin orbits
Switching scheme
Write currents
Enhancement of Voltage-Controlled Magnetic Anisotropy in Orthogonally-Magnetized CoFeB/MgO/CoFeB
会议论文
2024 IEEE INTERNATIONAL MAGNETIC CONFERENCE - SHORT PAPERS (INTERMAG SHORT PAPERS), Rio de Janeiro, Brazil, 5-10 May 2024
作者:
Puyang Huang
;
Aitian Chen
;
Xinyu Cai
;
Di Wu
;
Xi-Xiang Zhang
Adobe PDF(365Kb)
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浏览/下载:338/2
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提交时间:2024/07/08
Capacitance
Cobalt compounds
Iron compounds
Magnesia
Magnetic recording
MRAM devices
Anisotropy coefficients
Anisotropy effect
Circuit modeling
High-speed low-power
Interfacial capacitance
Magnetic tunneling junctions
Negative interfacial capacitance
Optimisations
Voltage-controled magnetic anisotropy effect
Voltage-controlled
A noise-tolerant, resource-saving probabilistic binary neural network implemented by the SOT-MRAM compute-in-memory system
预印本
2024
作者:
Gu, Yu
;
Huang, Puyang
;
Chen, Tianhao
;
Fu, Chenyi
;
Chen, Aitian
Adobe PDF(4358Kb)
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收藏
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浏览/下载:373/2
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提交时间:2024/05/15
Probabilistic binary neuron network
random weight matrix
spin-orbit-torque
computing-in-memory
noise-tolerance
Interfacial Resonance States-Induced Negative Tunneling Magneto-Resistance in Orthogonally Magnetized CoFeB/MgO/CoFeB
期刊论文
IEEE TRANSACTIONS ON MAGNETICS, 2024, 卷号: 60, 期号: 3, 页码: 1-6
作者:
Puyang Huang
;
Aitian Chen
;
Jianting Dong
;
Di Wu
;
Xinqi Liu
Adobe PDF(1265Kb)
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收藏
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浏览/下载:1475/6
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提交时间:2023/09/24
First-principle calculation
interfacial resonant state
magnetic tunnel junction (MTJ)
negative tunneling magneto-resistance (TMR)
Cobalt compounds
Iron compounds
Magnesia
Magnetic anisotropy
MRAM devices
Tunnel junctions
Tunnelling magnetoresistance
First principle calculations
Interfacial resonant state
Magnetic tunneling
Magnetic tunneling junctions
Magnetic-field
Negative tunneling magneto-resistance
Perpendicular magnetic anisotropy
Resistance
Resonant state
Tunneling magnetoresistance
Interfacial Resonance States-Induced Negative Tunneling Magneto-resistance in Orthogonally-Magnetized CoFeB/MgO/CoFeB
预印本
2023
作者:
Huang, Puyang
;
Chen, Aitian
;
Dong, Jianting
;
Wu, Di
;
Liu, Xinqi
Adobe PDF(1485Kb)
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收藏
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浏览/下载:281/2
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提交时间:2024/06/03
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