Photoemission study of the electronic structure of valence band convergent SnSe

doi:10.1103/PhysRevB.96.165118

	Photoemission study of the electronic structure of valence band convergent SnSe
	Wang, C. W.1,2,3; Xia, Y. Y. Y.2,3,4 ; Tian, Z.2,3,5 ; Jiang, J.2,6,7 ; Li, B. H.2 ; Cui, S. T.2 ; Yang, H. F.2 ; Liang, A. J.2 ; Zhan, X. Y.1,3; Hong, G. H.2,3,5 ; Liu, S.2,8 ; Chen, C.9; Wang, M. X.2 ; Yang, L. X.10,11,12; Liu, Z.1,2 ; Mi, Q. X.2 ; Li, G.2 ; Xue, J. M.2 ; Liu, Z. K.2 ; Chen, Y. L.2,9,10
	2017-10-10
发表期刊	PHYSICAL REVIEW B
ISSN	2469-9950
卷号	96 期号:16
发表状态	已发表
DOI	10.1103/PhysRevB.96.165118
摘要	IV-VI semiconductor SnSe has been known as the material with record high thermoelectric performance. The multiple close-to-degenerate (or "convergent") valence bands in the electronic band structure has been one of the key factors contributing to the high power factor and thus figure of merit in the SnSe single crystal. To date, there have been primarily theoretical calculations of this particular electronic band structure. In this paper, however, using angle-resolved photoemission spectroscopy, we perform a systematic investigation of the electronic structure of SnSe. We directly observe three predicted hole bands with small energy differences between their band tops and relatively small in-plane effective masses, in good agreement with the ab initio calculations and critical for the enhancement of the Seebeck coefficient while keeping high electrical conductivity. Our results reveal the complete band structure of SnSe and help to provide a deeper understanding of the electronic origin of the excellent thermoelectric performances in SnSe.
收录类别	SCI
语种	英语
资助项目	Science and Technology Commission of Shanghai Municipality[14520722100]
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000412700200002
出版者	AMER PHYSICAL SOC
WOS关键词	PERFORMANCE BULK THERMOELECTRICS ; FIGURE ; MERIT ; TEMPERATURE ; POWER ; CRYSTALS
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/9928
专题	物质科学与技术学院物质科学与技术学院_PI研究组_薛加民组物质科学与技术学院_PI研究组_米启兮组物质科学与技术学院_PI研究组_柳仲楷组大科学中心_PI研究组_刘志组物质科学与技术学院_PI研究组_李刚组物质科学与技术学院_特聘教授组_陈宇林物质科学与技术学院_硕士生物质科学与技术学院_博士生物质科学与技术学院_公共科研平台_拓扑物理实验室
通讯作者	Liu, Z. K.; Chen, Y. L.
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Ctr Excellence Superconducting Elect, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, CAS Shanghai Sci Res Ctr, Shanghai 200031, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China 5.Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China 6.Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA 7.POSTECH, Pohang Accelerator Lab, Pohang 790784, South Korea 8.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China 9.Univ Oxford, Dept Phys, Oxford OX1 3PU, England 10.Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China 11.Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China 12.Tsinghua Univ, Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Wang, C. W.,Xia, Y. Y. Y.,Tian, Z.,et al. Photoemission study of the electronic structure of valence band convergent SnSe[J]. PHYSICAL REVIEW B,2017,96(16).
APA	Wang, C. W..,Xia, Y. Y. Y..,Tian, Z..,Jiang, J..,Li, B. H..,...&Chen, Y. L..(2017).Photoemission study of the electronic structure of valence band convergent SnSe.PHYSICAL REVIEW B,96(16).
MLA	Wang, C. W.,et al."Photoemission study of the electronic structure of valence band convergent SnSe".PHYSICAL REVIEW B 96.16(2017).