Single crystal growth and transport properties of Cu-doped topological insulator Bi2Se3
Li, Z. J.1,2; Liu, Y.1; White, S. C.1; Wahl, P.1; Xie, X. M.2; Jiang, M. H.2; Lin, C. T.1
2012
Source PublicationSUPERCONDUCTIVITY CENTENNIAL CONFERENCE 2011
ISSN1875-3892
Volume36
Pages638-643
Status已发表
DOI10.1016/j.phpro.2012.06.182
Abstract

We report on the growth of high quality single crystals of CuxBi2Se3 with x=0, 0.12 and 0.15, using Bridgman method. A study of crystal structure shows that the c-lattice parameter slightly decreases with an increasing level of Cu-doping. STM images indicate that both Cu-intercalation between Se-Se layers and Cu-substitution in Bi-layer sites are present. With dc magnetization measurements, superconducting transitions in Cu-intercalated Bi2Se3 have been found with a T-C of 3.5 K for x similar to 0.12 and approximately 3.6 K for x similar to 0.15, respectively. The resistivity data show metallic behavior in the Bi2Se3 crystals and paramagnetic features are observed in the low temperature region of the Cu-doped samples. (C) 2012 Published by Elsevier B. V. Selection and/or peer-review under responsibility of the Guest Editors.

KeywordBi2se3 Topological Insulators Superconductivity
Publication PlaceSARA BURGERHARTSTRAAT 25, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Conference PlaceHague, NETHERLANDS
Conference DateSEP 18-23, 2011
Indexed ByISTP
Language英语
WOS Research AreaPhysics
WOS SubjectPhysics, Particles & Fields
WOS IDWOS:000314403400115
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:9[WOS]   [WOS Record]     [Related Records in WOS]
Document Type会议论文
Identifierhttps://kms.shanghaitech.edu.cn/handle/2MSLDSTB/8220
Collection个人在本单位外知识产出
Affiliation1.Max Planck Inst Solid State Res, Heisenbergstasse 1, D-70569 Stuttgart, Germany
2.Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
Recommended Citation
GB/T 7714
Li, Z. J.,Liu, Y.,White, S. C.,et al. Single crystal growth and transport properties of Cu-doped topological insulator Bi2Se3[C]. SARA BURGERHARTSTRAAT 25, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2012:638-643.
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