Si substrates playing two opposing roles in the process of preparing graphene by PECVD
Zhang, Pengbo1,2,3; Jiang, Xiangyu1,2; Fang, Xiaohong1,2; Yang, Liyou1; Chen, Xiaoyuan1,2,3
2020
Source PublicationApplied Surface Science
ISSN0169-4332
Volume501
DOI10.1016/j.apsusc.2019.144404
AbstractExposed in plasma excited by a RF coil in a plasma-enhanced chemical vapor deposition (PECVD) process to grow graphene, the silicon substrate is found to play a crucial role. Considering the results of simulations and experiments, the silicon substrate seems to be surrounded by a sheath electric field and consequently changes the local electric field in the vicinity of the substrate surface, which is likely to contribute to the deposition of graphene. In particular, the naturally formed pyramid structure on the top side of a textured silicon wafer turns out localized enhancing the electric field and make the pyramid peak prior to graphene nucleating and growing. Due to the different distribution of the sheath electric field, the pyramid structure on the bottom surface of the same substrate probably suppresses the nucleation and growth of graphene at the same time.
© 2019
Indexed ByEI
Funding ProjectCAS-SAFEA International Partnership Program for Creative Research Teams[]
PublisherElsevier B.V.
EI Accession Number20194307566196
EI KeywordsElectric fields ; Graphene ; Plasma CVD ; Plasma enhanced chemical vapor deposition ; Polarization ; Silicon wafers ; Textures
EI Classification NumberElectricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Coating Techniques:813.1
Original Document TypeJournal article (JA)
Citation statistics
Cited Times [WOS]:0   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://kms.shanghaitech.edu.cn/handle/2MSLDSTB/80574
Collection物质科学与技术学院_博士生
物质科学与技术学院_特聘教授组_陈小源组
Affiliation1.Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai; 201210, China
2.University of Chinese Academy of Sciences, Beijing; 100049, China
3.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China
First Author AffilicationSchool of Physical Science and Technology
Recommended Citation
GB/T 7714
Zhang, Pengbo,Jiang, Xiangyu,Fang, Xiaohong,et al. Si substrates playing two opposing roles in the process of preparing graphene by PECVD[J]. Applied Surface Science,2020,501.
APA Zhang, Pengbo,Jiang, Xiangyu,Fang, Xiaohong,Yang, Liyou,&Chen, Xiaoyuan.(2020).Si substrates playing two opposing roles in the process of preparing graphene by PECVD.Applied Surface Science,501.
MLA Zhang, Pengbo,et al."Si substrates playing two opposing roles in the process of preparing graphene by PECVD".Applied Surface Science 501(2020).
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