Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition

doi:10.1021/acs.chemmater.9b02061

	Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition
	Ma, Hong-Ping 1; Li, Xiao-Xi 1; Yang, Jia-He 1; Cheng, Peihong2 ; Huang, Wei 1; Zhu, Jingtao 3; Jen, Tien-Chien 4; Guo, Qixin 5; Lu, Hong-Liang 1; Zhang, David Wei 1
	2019-09-24
发表期刊	CHEMISTRY OF MATERIALS (IF:7.2[JCR-2023],8.4[5-Year])
ISSN	0897-4756
卷号	31 期号:18 页码:7405-7416
发表状态	已发表
DOI	10.1021/acs.chemmater.9b02061
摘要	This study provided a novel method for depositing high-quality GaOxNy film by plasma-enhanced atomic layer deposition (ALD). To obtain a uniform nitrogen and oxygen composition, O-2 and NH3 were led into the ALD chamber at the same time. It was found that the growth rate, composition, and optical properties of the GaOxNy film could be precisely controlled by adjusting the O-2:NH3 ratio. The energy band gap was well tuned from 3.46 to 4.78 eV with increased O-2 ratios. The detailed analysis of the X-ray photoelectron spectra proved the existence of Ga-O, Ga-N, and N-Ga-O bonds in prepared GaOxNy film. The surface, interface, and construction of the GaOxNy films were different with GaN and Ga2O3 films through transmission electron microscope characterization. Then a possible growth mechanism was demonstrated based on these findings. The energy band structure of all GaOxNy films deposited in this study was obtained from a detailed analysis of the valence band spectra. Importantly, the GaOxNy was found to exhibit lower leakage current and higher breakdown voltage than both GaN and Ga2O3. These findings offered a foundation and proved this material will present brilliant application prospects in photodetection, photoelectrochemical water splitting, and high-voltage devices.
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	China Postdoctoral Science Foundation[2018M631997] ; China Postdoctoral Science Foundation[2019T120294]
WOS研究方向	Chemistry ; Materials Science
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary
WOS记录号	WOS:000487859200033
出版者	AMER CHEMICAL SOC
EI主题词	Ammonia ; Atomic layer deposition ; Energy gap ; Film growth ; Gallium nitride ; III-V semiconductors ; Optical properties ; Photoelectron spectroscopy ; Quality control ; Transmission electron microscopy
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; OXIDE THIN-FILMS ; SILICON-NITRIDE ; GATE DIELECTRICS ; OXYNITRIDE ; PERFORMANCE ; GAN ; TEMPERATURE ; FABRICATION ; NITROGEN
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/80247
专题	物质科学与技术学院_公共科研平台_分析测试平台
通讯作者	Lu, Hong-Liang
作者单位	1.Fudan Univ, Sch Microelect, Shanghai Inst Intelligent Elect & Syst, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China 2.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Tongji Univ, Inst Precis Opt Engn, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China 4.Univ Johannesburg, ZA-2006 Johannesburg, South Africa 5.Saga Univ, Synchrotron Light Applicat Ctr, Dept Elect & Elect Engn, Saga 8408502, Japan
推荐引用方式 GB/T 7714	Ma, Hong-Ping,Li, Xiao-Xi,Yang, Jia-He,et al. Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition[J]. CHEMISTRY OF MATERIALS,2019,31(18):7405-7416.
APA	Ma, Hong-Ping.,Li, Xiao-Xi.,Yang, Jia-He.,Cheng, Peihong.,Huang, Wei.,...&Zhang, David Wei.(2019).Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition.CHEMISTRY OF MATERIALS,31(18),7405-7416.
MLA	Ma, Hong-Ping,et al."Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition".CHEMISTRY OF MATERIALS 31.18(2019):7405-7416.