First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process

doi:10.1109/IEDM19573.2019.8993501

	First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process
	Wenhui Xu1 ; Yibo Wang 2; Tiangui You 1; Xin Ou 1; Genquan Han 2; Haodong Hu 2; Shibin Zhang 1; Fengwen Mu 3; Tadatomo Suga 3; Yuhao Zhang 4; Yue Hao 2; Xi Wang 1
	2019-12-10
会议录名称	INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
发表状态	已发表
DOI	10.1109/IEDM19573.2019.8993501
收录类别	SCI
语种	英语
引用统计
文献类型	会议论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/67961
专题	物质科学与技术学院_特聘教授组_王曦组物质科学与技术学院_硕士生物质科学与技术学院_博士生
共同第一作者	Yibo Wang; Tiangui You
通讯作者	Xin Ou; Genquan Han
作者单位	1.State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 2.State Key Discipline Lab of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China 3.Collaborative Research Center, Meisei University, Hino-shi, Tokyo, Japan 4.Center of Power Electronics Systems, Virginia Polytechnic Institute and State University, VA, USA
推荐引用方式 GB/T 7714	Wenhui Xu,Yibo Wang,Tiangui You,et al. First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process[C],2019.