A study on ionic gated MoS2 phototransistors
Wu, Binmin1,2,4; Wang, Xudong1; Tang, Hongwei3; Lin, Tie1; Shen, Hong1; Hu, Weida1; Meng, Xiangjian1; Bao, Wenzhong3; Wang, Jianlu1; Chu, Junhao1,2

Molybdenum disulfide (MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2 using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an MoS2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2 and source/drain electrodes can be widely regulated from 11 to 179 meV. The MoS2 phototransistor exhibits excellent responsivity of 2.68 x 10(4) A/W and detectivity of 9.6 x 10(10) Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors.

KeywordMoS2 phototransistor electrolyte-gel gating Schottky barrier electric double layer two-dimensional materials
Indexed BySCI ; EI
Funding ProjectShanghai Sailing Program[19YF1454900]
WOS Research AreaComputer Science ; Engineering
WOS SubjectComputer Science, Information Systems ; Engineering, Electrical & Electronic
WOS IDWOS:000494473900001
EI KeywordsElectric fields ; Electrolytes ; Fused silica ; Layered semiconductors ; Modulation ; Molybdenum compounds ; Optoelectronic devices ; Phototransistors ; Schottky barrier diodes ; Vanadium compounds
Original Document TypeArticle
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Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Co-First AuthorWang, Xudong; Tang, Hongwei
Corresponding AuthorBao, Wenzhong; Wang, Jianlu
Affiliation1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
3.Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
First Author AffilicationSchool of Physical Science and Technology
Recommended Citation
GB/T 7714
Wu, Binmin,Wang, Xudong,Tang, Hongwei,et al. A study on ionic gated MoS2 phototransistors[J]. SCIENCE CHINA-INFORMATION SCIENCES,2019,62(12).
APA Wu, Binmin.,Wang, Xudong.,Tang, Hongwei.,Lin, Tie.,Shen, Hong.,...&Chu, Junhao.(2019).A study on ionic gated MoS2 phototransistors.SCIENCE CHINA-INFORMATION SCIENCES,62(12).
MLA Wu, Binmin,et al."A study on ionic gated MoS2 phototransistors".SCIENCE CHINA-INFORMATION SCIENCES 62.12(2019).
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