ShanghaiTech University Knowledge Management System
A study on ionic gated MoS2 phototransistors | |
2019-12 | |
发表期刊 | SCIENCE CHINA-INFORMATION SCIENCES |
ISSN | 1674-733X |
EISSN | 1869-1919 |
卷号 | 62期号:12 |
发表状态 | 已发表 |
DOI | 10.1007/s11432-019-1472-6 |
摘要 | Molybdenum disulfide (MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2 using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an MoS2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2 and source/drain electrodes can be widely regulated from 11 to 179 meV. The MoS2 phototransistor exhibits excellent responsivity of 2.68 x 10(4) A/W and detectivity of 9.6 x 10(10) Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors. |
关键词 | MoS2 phototransistor electrolyte-gel gating Schottky barrier electric double layer two-dimensional materials |
收录类别 | SCI ; SCIE ; EI |
资助项目 | Shanghai Sailing Program[19YF1454900] |
WOS研究方向 | Computer Science ; Engineering |
WOS类目 | Computer Science, Information Systems ; Engineering, Electrical & Electronic |
WOS记录号 | WOS:000494473900001 |
出版者 | SCIENCE PRESS |
EI主题词 | Electric fields ; Electrolytes ; Fused silica ; Layered semiconductors ; Modulation ; Molybdenum compounds ; Optoelectronic devices ; Phototransistors ; Schottky barrier diodes ; Vanadium compounds |
WOS关键词 | GRAPHENE-OXIDE ; SENSOR ; PERFORMANCE ; DEPOSITION ; PHASE |
原始文献类型 | Article |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/67959 |
专题 | 物质科学与技术学院_特聘教授组_褚君浩组 物质科学与技术学院_硕士生 |
共同第一作者 | Wang, Xudong; Tang, Hongwei |
通讯作者 | Bao, Wenzhong; Wang, Jianlu |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Wu, Binmin,Wang, Xudong,Tang, Hongwei,et al. A study on ionic gated MoS2 phototransistors[J]. SCIENCE CHINA-INFORMATION SCIENCES,2019,62(12). |
APA | Wu, Binmin.,Wang, Xudong.,Tang, Hongwei.,Lin, Tie.,Shen, Hong.,...&Chu, Junhao.(2019).A study on ionic gated MoS2 phototransistors.SCIENCE CHINA-INFORMATION SCIENCES,62(12). |
MLA | Wu, Binmin,et al."A study on ionic gated MoS2 phototransistors".SCIENCE CHINA-INFORMATION SCIENCES 62.12(2019). |
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