Strain modulated nanostructure patterned AlGaN-based deep ultraviolet multiple-quantum-wells for polarization control and light extraction efficiency enhancement

doi:10.1088/1361-6528/ab3208

	Strain modulated nanostructure patterned AlGaN-based deep ultraviolet multiple-quantum-wells for polarization control and light extraction efficiency enhancement
	Xu, Houqiang 1,2; Long, Hanling 3; Jiang, Jie'an1,2,4 ; Sheikhi, Moheb 1,2; Li, Liang 1,2,5; Guo, Wei 1; Dai, Jiangnan 3; Chen, Changqing 3; Ye, Jichun 1,2
	2019-10-25
发表期刊	NANOTECHNOLOGY (IF:2.9[JCR-2023],2.8[5-Year])
ISSN	0957-4484
卷号	30 期号:43
发表状态	已发表
DOI	10.1088/1361-6528/ab3208
摘要	AlGaN-based deep ultraviolet (DUV) multiple-quantum-wells (MQWs) incorporating strain-modulated nanostructures are proposed, demonstrating enhanced degree of polarization (DOP) and improved light extraction efficiency (LEE). The influence of Al composition and bi-axial strains on the optical behaviors of the DUV-MQWs were carefully examined Compared with planar DUV-MQWs, strain-modulated nanostructure patterned MQWs show three times higher photoluminescence and increased DOP from -0.43 to -0.16. Moreover, nanostructure patterned DUV-MQWs under compressive strains further illustrate higher DOP and LEE values than those under tensile strains due to more efficient diffraction of the guided modes of the transverse electric (IL) polarized light. Our work demonstrates, for the first time, that a combination of compressive in-plane strain and surface nanostructure show unambiguous advantages in facilitating TE mode emission, thus have great promises in the design and optimization of highly efficient polarized DUV optoelectronic devices.
关键词	DUV-LEDs degree of polarization light extraction efficiency strain modulation nanostructure
收录类别	SCI ; SCIE ; EI
资助项目	Zhejiang Provincial Natural Science Foundation[LY19F040002]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000480325300001
出版者	IOP PUBLISHING LTD
EI主题词	Aluminum gallium nitride ; Efficiency ; Extraction ; III-V semiconductors ; Nanostructures ; Optoelectronic devices ; Polarization ; Strain
WOS关键词	III-NITRIDE BLUE ; EMITTING-DIODES ; OPTICAL-PROPERTIES ; ALN ; SURFACE ; BUFFER ; MQWS ; LEDS ; GAN
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/64589
专题	物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Guo, Wei; Dai, Jiangnan; Ye, Jichun
作者单位	1.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Hubei, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.Shanghai Univ, Shanghai 200444, Peoples R China
推荐引用方式 GB/T 7714	Xu, Houqiang,Long, Hanling,Jiang, Jie'an,et al. Strain modulated nanostructure patterned AlGaN-based deep ultraviolet multiple-quantum-wells for polarization control and light extraction efficiency enhancement[J]. NANOTECHNOLOGY,2019,30(43).
APA	Xu, Houqiang.,Long, Hanling.,Jiang, Jie'an.,Sheikhi, Moheb.,Li, Liang.,...&Ye, Jichun.(2019).Strain modulated nanostructure patterned AlGaN-based deep ultraviolet multiple-quantum-wells for polarization control and light extraction efficiency enhancement.NANOTECHNOLOGY,30(43).
MLA	Xu, Houqiang,et al."Strain modulated nanostructure patterned AlGaN-based deep ultraviolet multiple-quantum-wells for polarization control and light extraction efficiency enhancement".NANOTECHNOLOGY 30.43(2019).