A 16-Channel Neurostimulation IC With Self-Biased Monopolar Stimulus Drivers and a Multiple-Output Charge-Pump Converter Achieving 25.44-mW/mm2 Power Density in Low-Voltage CMOS

doi:10.1109/TCSI.2025.3562150

	A 16-Channel Neurostimulation IC With Self-Biased Monopolar Stimulus Drivers and a Multiple-Output Charge-Pump Converter Achieving 25.44-mW/mm2 Power Density in Low-Voltage CMOS
	Pengfei Han1 ; Yi Ding1 ; Dingfu He1 ; Xinqin Guo1 ; Shiyv Wu1 ; Hongming Lyu2,3
	2025
发表期刊	IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS (IF:5.2[JCR-2023],4.5[5-Year])
ISSN	1558-0806
EISSN	1558-0806
卷号	PP 期号:99 页码:-
发表状态	已发表
DOI	10.1109/TCSI.2025.3562150
摘要	Electrical neuromodulation has shown superior therapeutic outcomes compared with pharmacological interventions alone. This work introduces a 16-channel neurostimulation IC featuring transistor-stacked monopolar stimulation drivers in standard CMOS technology. With a self-adaptive biasing scheme, the stimulation driver ensures operational safety across all load conditions under the ±6-V voltage compliance and successfully addresses potential leakage issues in prior work. Each driver features 8-bit current control with 1 μA resolution. An on-chip charge-pump system generates ±6-V supplies using a novel multiple-output pulse-skipping modulation scheme and achieves a remarkable power density of 25.44 mW/mm2 through the systematic optimization of sub-converters. The 16-channel neurostimulation IC is fabricated in a 180-nm standard CMOS technology, occupying a total pad-included area of 3 mm2. The compactness and process compatibility of the design demonstrate the potential for enabling next-generation high-channel-count neural interfaces.
关键词	Neurostimulation monopolar stimulation current-controlled stimulation transistor-stacking charge-pump DC-DC converter power density power efficiency CMOS
学科领域	电子、通信与自动控制技术
学科门类	工学::电子科学与技术（可授工学、理学学位）
URL	查看原文
收录类别	SCI ; SCIE ; EI
语种	英语
出版者	Institute of Electrical and Electronics Engineers Inc.
EI入藏号	20251818358303
EI主题词	CMOS integrated circuits
EI分类号	703 Electric Circuits ; 714.2 Semiconductor Devices and Integrated Circuits ; 904 Design ; 1102.3.1 Computer Circuits
原始文献类型	Article in Press
来源库	IEEE
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/523870
专题	信息科学与技术学院信息科学与技术学院_硕士生信息科学与技术学院_博士生信息科学与技术学院_PI研究组_吕宏鸣组
通讯作者	Hongming Lyu
作者单位	1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.School of Information Science and Technology and the State Key Laboratory of Advanced Medical Materials and Devices, ShanghaiTech University, Shanghai, China 3.Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, Shanghai, China
第一作者单位	信息科学与技术学院
通讯作者单位	信息科学与技术学院
第一作者的第一单位	信息科学与技术学院
推荐引用方式 GB/T 7714	Pengfei Han,Yi Ding,Dingfu He,et al. A 16-Channel Neurostimulation IC With Self-Biased Monopolar Stimulus Drivers and a Multiple-Output Charge-Pump Converter Achieving 25.44-mW/mm2 Power Density in Low-Voltage CMOS[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS,2025,PP(99):-.
APA	Pengfei Han,Yi Ding,Dingfu He,Xinqin Guo,Shiyv Wu,&Hongming Lyu.(2025).A 16-Channel Neurostimulation IC With Self-Biased Monopolar Stimulus Drivers and a Multiple-Output Charge-Pump Converter Achieving 25.44-mW/mm2 Power Density in Low-Voltage CMOS.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS,PP(99),-.
MLA	Pengfei Han,et al."A 16-Channel Neurostimulation IC With Self-Biased Monopolar Stimulus Drivers and a Multiple-Output Charge-Pump Converter Achieving 25.44-mW/mm2 Power Density in Low-Voltage CMOS".IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I: REGULAR PAPERS PP.99(2025):-.