Wafer-Scale Nanoprinting of 3D Interconnects beyond Cu

doi:10.1021/acsnano.5c00720

	Wafer-Scale Nanoprinting of 3D Interconnects beyond Cu
	Yin, Yuxiang; Liu, Bingyan; Zhang, Yueqi; Han, Yaochen; Liu, Qiling; Feng, Jicheng
	2025-04-23
发表期刊	ACS NANO (IF:15.8[JCR-2023],16.2[5-Year])
ISSN	1936-0851
EISSN	1936-086X
卷号	19 期号:18 页码:17578-17588
DOI	10.1021/acsnano.5c00720
摘要	Cloud operations and services, as well as many other modern computing tasks, require hardware that is run by very densely packed integrated circuits (ICs) and heterogenous ICs. The performance of these ICs is determined by the stability and properties of the interconnects between the semiconductor devices and ICs. Although some ICs with 3D interconnects are commercially available, there has been limited progress on 3D printing utilizing emerging nanomaterials. Moreover, laying out reliable 3D metal interconnects in ICs with the appropriate electrical and physical properties remains challenging. Here, we propose high-throughput 3D interconnection with nanoscale precision by leveraging lines of forces. We successfully nanoprinted multiscale and multilevel Au, Ir, and Ru 3D interconnects on the wafer scale in non-vacuum conditions using a pulsed electric field. The ON phase of the pulsed field initiates in situ printing of nanoparticle (NP) deposition into interconnects, whereas the OFF phase allows the gas flow to evenly distribute the NPs over an entire wafer. Characterization of the 3D interconnects confirms their excellent uniformity, electrical properties, and free-form geometries, far exceeding those of any 3D-printed interconnects. Importantly, their measured resistances approach the theoretical values calculated here. The results demonstrate that 3D nanoprinting can be used to fabricate thinner and faster interconnects, which can enhance the performance of dense ICs; therefore, 3D nanoprinting can complement lithography and resolve the challenges encountered in the fabrication of critical device features.
关键词	Faraday 3D printing metal 3D nanostructures resistivity next-generation metallization highthroughput aerosol nanotechnology miniaturization
URL	查看原文
收录类别	SCI ; EI
语种	英语
资助项目	National Natural Science Foundation of China[92261102] ; ShanghaiTech Material and Device Lab (SMDL)[SMN180827]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:001473269700001
出版者	AMER CHEMICAL SOC
EI入藏号	20251818327559
EI主题词	Integrated circuit interconnects
EI分类号	102.2.1 Pharmaceutics and Drug Products ; 201.9.3 Metal Plating ; 208.1 Coating Techniques ; 714.2 Semiconductor Devices and Integrated Circuits ; 745.2 Reproduction, Copying ; 761 Nanotechnology ; 1301.4 Solid State Physics
原始文献类型	Journal article (JA)
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/520700
专题	物质科学与技术学院_博士生物质科学与技术学院_硕士生物质科学与技术学院_PI研究组_冯继成组
共同第一作者	Liu, Bingyan
通讯作者	Feng, Jicheng
作者单位	ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
第一作者的第一单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Yin, Yuxiang,Liu, Bingyan,Zhang, Yueqi,et al. Wafer-Scale Nanoprinting of 3D Interconnects beyond Cu[J]. ACS NANO,2025,19(18):17578-17588.
APA	Yin, Yuxiang,Liu, Bingyan,Zhang, Yueqi,Han, Yaochen,Liu, Qiling,&Feng, Jicheng.(2025).Wafer-Scale Nanoprinting of 3D Interconnects beyond Cu.ACS NANO,19(18),17578-17588.
MLA	Yin, Yuxiang,et al."Wafer-Scale Nanoprinting of 3D Interconnects beyond Cu".ACS NANO 19.18(2025):17578-17588.