| |||||||
ShanghaiTech University Knowledge Management System
High-precision X-ray characterization for basic materials in modern high-end integrated circuit | |
2024-07 | |
发表期刊 | JOURNAL OF SEMICONDUCTORS (IF:4.8[JCR-2023],3.3[5-Year]) |
ISSN | 2058-6140 |
发表状态 | 已发表 |
DOI | 10.1088/1674-4926/24030016 |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/503690 |
专题 | 物质科学与技术学院 物质科学与技术学院_硕士生 物质科学与技术学院_博士生 |
共同第一作者 | Zhao WR(赵蔚然); Zheng L(郑理) |
通讯作者 | Zheng L(郑理) |
作者单位 | 1.National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China 2.School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China 3.Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China 4.Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Science, Beijing 100049, China |
第一作者单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Zhao WR,Mo QQ,Zheng L,et al. High-precision X-ray characterization for basic materials in modern high-end integrated circuit[J]. JOURNAL OF SEMICONDUCTORS,2024. |
APA | Zhao WR,Mo QQ,Zheng L,Li ZL,Zhang XW,&Yu YH.(2024).High-precision X-ray characterization for basic materials in modern high-end integrated circuit.JOURNAL OF SEMICONDUCTORS. |
MLA | Zhao WR,et al."High-precision X-ray characterization for basic materials in modern high-end integrated circuit".JOURNAL OF SEMICONDUCTORS (2024). |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 |
修改评论
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。