Nanoscale Resist-Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography

doi:10.1002/advs.202415804

	Nanoscale Resist-Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography
	Li, Weina 1,2,3,4; Ma, Tianlei 1,2,3; Tang, Pengyi 1,2,3,4; Luo, Yunhong5 ; Zhang, Hui 6,7; Zhao, Jun 6; Ameloot, Rob 8; Tu, Min 1,2,3,4
	2025-03-01
发表期刊	ADVANCED SCIENCE (IF:14.3[JCR-2023],16.3[5-Year])
ISSN	2198-3844
EISSN	2198-3844
发表状态	已发表
DOI	10.1002/advs.202415804
摘要	Advancements in patterning techniques for metal-organic frameworks (MOFs) are crucial for their integration into microelectronics. However, achieving precise nanoscale control of MOF structures remains challenging. In this work, a resist-free method for patterning MOFs is demonstrated using extreme ultraviolet (EUV) lithography with a resolution of 40 nm. The role of halogen atoms in the linker and the effect of humidity are analyzed through in situ and near-ambient pressure synchrotron X-ray photoelectron spectroscopy. In addition to facilitating the integration of MOFs, the results offer valuable insights for developing the highly sought-after positive-tone EUV photoresists.
关键词	EUV lithography metal-organic frameworks resist-free patterning thin films zeolitic imidazolate frameworks
URL	查看原文
收录类别	SCI ; EI
语种	英语
资助项目	National Natural Science Foundation of China[22201289] ; EU[654360 NFFA-Europe] ; Research Foundation Flanders (FWO Vlaanderen)[
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:001438038300001
出版者	WILEY
EI入藏号	20251118027219
EI主题词	X ray photoelectron spectroscopy
EI分类号	1301.1.3.1 Spectroscopy ; 208.2 Coating Materials ; 712.1.2 Compound Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 745.1 Printing
原始文献类型	Article in Press
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/500268
专题	物质科学与技术学院物质科学与技术学院_博士生
通讯作者	Ameloot, Rob; Tu, Min
作者单位	1.Chinese Acad Sci, State Key Lab Transducer Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, 2020 X Lab, Shanghai 200050, Peoples R China 4.Univ Chinese Acad Sci, Sch Grad Study, Beijing 100049, Peoples R China 5.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 6.Chinese Acad Sci, Shanghai Adv Res Inst, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China 7.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Natl Key Lab Mat Integrated Circuits, Shanghai 200050, Peoples R China 8.Katholieke Univ Leuven, Ctr Membrane Separat Adsorpt Catalysis & Spect, B-3001 Leuven, Belgium
推荐引用方式 GB/T 7714	Li, Weina,Ma, Tianlei,Tang, Pengyi,et al. Nanoscale Resist-Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography[J]. ADVANCED SCIENCE,2025.
APA	Li, Weina.,Ma, Tianlei.,Tang, Pengyi.,Luo, Yunhong.,Zhang, Hui.,...&Tu, Min.(2025).Nanoscale Resist-Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography.ADVANCED SCIENCE.
MLA	Li, Weina,et al."Nanoscale Resist-Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography".ADVANCED SCIENCE (2025).