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ShanghaiTech University Knowledge Management System
Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications | |
2025-02-01 | |
发表期刊 | JOURNAL OF SEMICONDUCTORS (IF:4.8[JCR-2023],3.3[5-Year]) |
ISSN | 1674-4926 |
卷号 | 46期号:2 |
发表状态 | 已发表 |
DOI | 10.1088/1674-4926/24100025 |
摘要 | The traditional von Neumann architecture faces inherent limitations due to the separation of memory and computation, leading to high energy consumption, significant latency, and reduced operational efficiency. Neuromorphic computing, inspired by the architecture of the human brain, offers a promising alternative by integrating memory and computational functions, enabling parallel, high-speed, and energy-efficient information processing. Among various neuromorphic technologies, ion-modulated optoelectronic devices have garnered attention due to their excellent ionic tunability and the availability of multidimensional control strategies. This review provides a comprehensive overview of recent progress in ion-modulation optoelectronic neuromorphic devices. It elucidates the key mechanisms underlying ionic modulation of light fields, including ion migration dynamics and capture and release of charge through ions. Furthermore, the synthesis of active materials and the properties of these devices are analyzed in detail. The review also highlights the application of ion-modulation optoelectronic devices in artificial vision systems, neuromorphic computing, and other bionic fields. Finally, the existing challenges and future directions for the development of optoelectronic neuromorphic devices are discussed, providing critical insights for advancing this promising field. © 2025 Chinese Institute of Electronics. |
关键词 | Image coding - Memory architecture Artificial vision system - High energy consumption - Inherent limitations - Ion migration - Ion modulation - Neumann architecture - Neuromorphic - Neuromorphic computing - Optoelectronic modulation - Optoelectronics devices |
收录类别 | EI |
语种 | 英语 |
出版者 | Institute of Physics |
EI入藏号 | 20250917977751 |
EI主题词 | Optoelectronic devices |
EI分类号 | 1103 Computer Systems and Equipment - 1104 Computer Architecture - 1106.3.1 Image Processing - 741.3 Optical Devices and Systems |
原始文献类型 | Journal article (JA) |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/497009 |
专题 | 物质科学与技术学院 物质科学与技术学院_博士生 |
通讯作者 | Gao, Runsheng; Zhu, Xiaojian |
作者单位 | 1.CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo; 315201, China; 2.Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo; 315201, China; 3.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China |
第一作者单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Meng, Xiaohan,Gao, Runsheng,Zhu, Xiaojian,et al. Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications[J]. JOURNAL OF SEMICONDUCTORS,2025,46(2). |
APA | Meng, Xiaohan,Gao, Runsheng,Zhu, Xiaojian,&Li, Run-Wei.(2025).Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications.JOURNAL OF SEMICONDUCTORS,46(2). |
MLA | Meng, Xiaohan,et al."Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications".JOURNAL OF SEMICONDUCTORS 46.2(2025). |
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