上海科技大学知识管理系统

Electrical neuromodulation has shown superior therapeutic outcomes compared to pharmacological interventions alone. This work presents a 16-channel neurostimulation IC based on transistor-stacked monopolar stimulation drivers in a standard CMOS technology. With a self-adaptive biasing scheme, the stimulation driver ensures the operation safety in all load conditions under the ±6-V voltage compliances and successfully addresses potential leakage issues in prior arts. Each driver features eight-bit current control with a resolution of 1 μA. An on-chip charge-pump system generates ±6-V voltage supplies with a novel multiple-output pulse-skipping modulation scheme and achieves a remarkable power density of 25.44 mW/mm² through systematic optimization of sub-converters. The 16- channel neurostimulation IC is fabricated in a 180-nm standard CMOS technology with a pad-included area of 3 mm2 . The compactness and the process-compatibility of the design highlights the potential for realizing next-generation high- channel-count neural interfaces.