Giant negative area compressibility in layered Sn4P3 with enhanced superconductivity
2025-02-19
发表期刊CELL REPORTS PHYSICAL SCIENCE (IF:7.9[JCR-2023],8.4[5-Year])
ISSN2666-3864
EISSN2666-3864
卷号6期号:2
发表状态已发表
DOI10.1016/j.xcrp.2025.102450
摘要

The negative compressibility effect with the exotic compression-expansion behavior has attracted extensive attention. Here, we present a giant negative area compressibility (NAC) with a magnitude of-157.6 TPa-1 in layered superconductor Sn4P3, which is driven by a pressure-induced isostructural phase transition that preserves the pristine R (3) over bar m symmetry. Sn4P3 is the first intrinsic superconductor that hosts NAC and manifests the largest NAC coefficient to date. Furthermore, the superconducting transition temperature (T-c) is significantly enhanced accompanied by NAC, reaching a maximum value of similar to 7.85 K. The formation of dimerized P1-P3 in the high-pressure isostructural phase (HP-R (3) over barm) improves the density of states of P atoms around the Fermi level, which is vital for the increment of T-c. Moreover, in the frame of electron-phonon coupling, the coupling of P-phonon modes and Sn-p electrons is responsible for the superconducting state in the HP-R (3) over bar m phase. Our work not only enriches the NAC material family but also facilitates the understanding of the impact of NAC on superconducting properties.

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收录类别SCI
语种英语
资助项目National Key R&D Program of China[2023YFA1607400] ; National Natural Science Foundation of China[
WOS研究方向Chemistry ; Energy & Fuels ; Materials Science ; Physics
WOS类目Chemistry, Multidisciplinary ; Energy & Fuels ; Materials Science, Multidisciplinary ; Physics, Multidisciplinary
WOS记录号WOS:001430533100001
出版者CELL PRESS
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/496875
专题物质科学与技术学院
物质科学与技术学院_PI研究组_颜世超组
物质科学与技术学院_特聘教授组_陈宇林
物质科学与技术学院_PI研究组_齐彦鹏组
物质科学与技术学院_硕士生
物质科学与技术学院_博士生
物质科学与技术学院_公共科研平台_拓扑物理实验室
通讯作者Xia, Tianlong; Yan, Shichao; Qi, Yanpeng
作者单位
1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
2.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China
3.Anhui Univ, Inst Phys Sci & Informat Technol, Hefei 230601, Anhui, Peoples R China
4.Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China
5.Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano De, Beijing 100872, Peoples R China
6.ShanghaiTech Univ, Shanghai Key Lab High Resolut Electron Microscopy, Shanghai 201210, Peoples R China
7.Renmin Univ China, Key Lab Quantum State Construct & Manipulat, Minist Educ, Beijing 100872, Peoples R China
8.Univ Oxford, Dept Phys, Clarendon Lab, Parks Rd, Oxford OX1 3PU, England
第一作者单位物质科学与技术学院;  上海科技大学
通讯作者单位物质科学与技术学院;  上海科技大学
第一作者的第一单位物质科学与技术学院
推荐引用方式
GB/T 7714
Wang, Qi,Wu, Juefei,Wang, Yiyan,et al. Giant negative area compressibility in layered Sn4P3 with enhanced superconductivity[J]. CELL REPORTS PHYSICAL SCIENCE,2025,6(2).
APA Wang, Qi.,Wu, Juefei.,Wang, Yiyan.,Zheng, Fanbang.,Pei, Cuiying.,...&Qi, Yanpeng.(2025).Giant negative area compressibility in layered Sn4P3 with enhanced superconductivity.CELL REPORTS PHYSICAL SCIENCE,6(2).
MLA Wang, Qi,et al."Giant negative area compressibility in layered Sn4P3 with enhanced superconductivity".CELL REPORTS PHYSICAL SCIENCE 6.2(2025).
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