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Impact of Background Oxygen Pressure on the Pulsed-Laser Deposition of ZnO Nanolayers and on Their Corresponding Performance as Electron Acceptors in PbS Quantum-Dot Solar Cells
2019-02
发表期刊ACS APPLIED NANO MATERIALS (IF:5.3[JCR-2023],5.4[5-Year])
ISSN2574-0970
卷号2期号:2页码:767-777
发表状态已发表
DOI10.1021/acsanm.8b01983
摘要ZnO films are commonly employed as n-type semiconductors in heterojunctions with PbS colloidal quantum-dot (CQDs) films because of their outstanding optical transparency and electron acceptor properties, yet studies of the impact of ZnO film microstructure, composition, and defect qualities on the solar-cell performance are quite limited. Here we report on the fabrication of ZnO films via pulsed-laser deposition and use these films to investigate how different morphologies affect the PbS CQD solar-cell performance. By modification of the background gas O-2 pressures during the ZnO deposition process, the device performance approaching a 7.8% energy conversion efficiency is achieved with an O-2 pressure of 100 mTorr. Higher or lower O-2 pressures led to significantly lower device efficiency. We employ various materials and device characterizations to highlight the differences in the physical properties introduced by the fabrication oxygen pressure. In particular, we have found that the differences in the type and density of ZnO oxygen defects are the key factors behind the dispersion in solar-cell performances.
关键词ZnO PbS quantum dots thin-film solar cell physical mechanism pulsed-laser deposition
收录类别ESCI ; SCIE ; EI
语种英语
资助项目Materials Interdisciplinary Research Team - National Science Foundation[DMR-1436201]
WOS研究方向Science & Technology - Other Topics ; Materials Science
WOS类目Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号WOS:000469409900018
出版者AMER CHEMICAL SOC
EI主题词Conversion efficiency ; Defects ; Heterojunctions ; II-VI semiconductors ; IV-VI semiconductors ; Magnetic semiconductors ; Metallic films ; Nanocrystals ; Nanostructured materials ; Narrow band gap semiconductors ; Oxygen ; Pulsed laser deposition ; Pulsed lasers ; Quantum dot lasers ; Semiconducting lead compounds ; Semiconductor quantum dots ; Sols ; Thin film solar cells ; Thin films ; Wide band gap semiconductors ; Zinc oxide
WOS关键词THIN-FILMS ; IMPEDANCE ; RECOMBINATION ; PHOTOVOLTAICS ; NANOPARTICLES ; NANOCRYSTALS ; TEMPERATURE ; TRANSPORT ; EMISSION ; OXIDE
原始文献类型Article
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文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/48960
专题物质科学与技术学院_PI研究组_rene Lopez组
物质科学与技术学院_硕士生
物质科学与技术学院_博士生
通讯作者Lopez, Rene
作者单位
1.Univ N Carolina, Dept Appl Phys Sci, Chapel Hill, NC 27599 USA
2.Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27599 USA
3.Univ N Carolina, Dept Chem, Chapel Hill, NC 27599 USA
4.Shanghai Tech Univ, Sch Phys Sci & Technol, 393 Middle Huaxia Rd, Shanghai 201210, Peoples R China
通讯作者单位物质科学与技术学院
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GB/T 7714
Dong, Qian,Liu, Huiyan,Hara, Yukihiro,et al. Impact of Background Oxygen Pressure on the Pulsed-Laser Deposition of ZnO Nanolayers and on Their Corresponding Performance as Electron Acceptors in PbS Quantum-Dot Solar Cells[J]. ACS APPLIED NANO MATERIALS,2019,2(2):767-777.
APA Dong, Qian,Liu, Huiyan,Hara, Yukihiro,Starr, Hannah E.,Dempsey, Jillian L.,&Lopez, Rene.(2019).Impact of Background Oxygen Pressure on the Pulsed-Laser Deposition of ZnO Nanolayers and on Their Corresponding Performance as Electron Acceptors in PbS Quantum-Dot Solar Cells.ACS APPLIED NANO MATERIALS,2(2),767-777.
MLA Dong, Qian,et al."Impact of Background Oxygen Pressure on the Pulsed-Laser Deposition of ZnO Nanolayers and on Their Corresponding Performance as Electron Acceptors in PbS Quantum-Dot Solar Cells".ACS APPLIED NANO MATERIALS 2.2(2019):767-777.
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