AlScN Ferroelectric Diode Enabled CAM with 4F2 Cell Size and Low Thermal Budget (330 °C)

doi:10.1109/LED.2025.3538669

	AlScN Ferroelectric Diode Enabled CAM with 4F2 Cell Size and Low Thermal Budget (330 °C)
	Wenxin Sun 1,2; Xiao Kou 1,2; Jiuren Zhou 1,2; Siying Zheng 1,2; Jiawei Li 3; Danyang Yao 1,2; Bochang Li 1,2; Tao Wu3 ; Yan Liu 1,2; Yue Hao 1,2; Genquan Han 1,2
	2025
发表期刊	IEEE ELECTRON DEVICE LETTERS (IF:4.1[JCR-2023],4.2[5-Year])
ISSN	1558-0563
EISSN	1558-0563
卷号	PP 期号:99
发表状态	已发表
DOI	10.1109/LED.2025.3538669
摘要	In pursuit of high-density three-dimensional integrated content addressable memories (CAMs), we experimentally reported the single AlScN ferroelectric diode-enabled CAM, having an ultra-compact cell size of 4 F2 and a low thermal budget of 330 °C. This is realized by implementing one resistor (1R)-architecture cell design coupled with utilization of emerging ferroelectric AlScN. Such an easily implementable yet highly effective approach for high-density integrated CAMs holds significant promise for propelling forthcoming data-intensive applications forward.
关键词	Ferroelectric devices Ferroelectric materials PIN diodes Three dimensional integrated circuits Cell design Cell-size Content-addressable memory Data-intensive application Effective approaches Fe-diode Footprint Low thermal budget Thermal
URL	查看原文
收录类别	EI
语种	英语
出版者	Institute of Electrical and Electronics Engineers Inc.
EI入藏号	20250717876901
EI主题词	Budget control
EI分类号	704 Electric Components and Equipment ; 708.1 Dielectric Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 911 Cost and Value Engineering ; Industrial Economics ; 912.2 Management
原始文献类型	Article in Press
来源库	IEEE
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/484001
专题	信息科学与技术学院信息科学与技术学院_PI研究组_吴涛组
作者单位	1.School of Microelectronics, Xidian University, Xi’an, China 2.Hangzhou Institute of Technology, Hangzhou, China 3.School of Information Science and Technology, ShanghaiTech University, Shanghai, China
推荐引用方式 GB/T 7714	Wenxin Sun,Xiao Kou,Jiuren Zhou,et al. AlScN Ferroelectric Diode Enabled CAM with 4F2 Cell Size and Low Thermal Budget (330 °C)[J]. IEEE ELECTRON DEVICE LETTERS,2025,PP(99).
APA	Wenxin Sun.,Xiao Kou.,Jiuren Zhou.,Siying Zheng.,Jiawei Li.,...&Genquan Han.(2025).AlScN Ferroelectric Diode Enabled CAM with 4F2 Cell Size and Low Thermal Budget (330 °C).IEEE ELECTRON DEVICE LETTERS,PP(99).
MLA	Wenxin Sun,et al."AlScN Ferroelectric Diode Enabled CAM with 4F2 Cell Size and Low Thermal Budget (330 °C)".IEEE ELECTRON DEVICE LETTERS PP.99(2025).