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ShanghaiTech University Knowledge Management System
Multi-field coupling challenges the stability test of silicon solar cells | |
2025-01-06 | |
发表期刊 | APPLIED PHYSICS LETTERS (IF:3.5[JCR-2023],3.5[5-Year]) |
ISSN | 0003-6951 |
EISSN | 1077-3118 |
卷号 | 126期号:1 |
发表状态 | 已发表 |
DOI | 10.1063/5.0245800 |
摘要 | UV-induced degradation is an important factor affecting the stability of silicon heterojunction (SHJ) solar cells. Many works investigated the root cause of this degradation previously, but its coupling with other external stress, such as temperature, has rarely been reported. Here, we examine the decrease in SHJ solar cells induced by UV irradiation at different temperatures (-30 and 80 degrees C) using ultraviolet lamps at 200 W/m(2) for 300 h. The results showed that the UV-induced degradation is more severe at low temperature (-30 degrees C), leading to a significant power decrease (13.5% on average) compared with the power attenuation of the solar cell at 80 degrees C (1.59% on average). At a low temperature (-30 degrees C), the V-OC and FF evidently decrease much faster. Light soaking can repair the damage to some extent, but the power conversion efficiency cannot restore to the initial value. A 3D microscope confirmed this is because the silver metal electrodes are permanently degraded. These findings challenge the standard International Electrotechnical Commission (IEC) stability test for solar cells, in other words, we have to take into account multi-field coupling to evaluate the long-term reliability of solar cells in real environments. |
关键词 | External stress Heterojunction solar cells Induced degradation Lows-temperatures Multi-field coupling Root cause Silicon heterojunctions Stability tests UV induced UV irradiation |
URL | 查看原文 |
收录类别 | SCI ; EI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China10.13039/501100001809[ |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
WOS记录号 | WOS:001390823400018 |
出版者 | AIP Publishing |
EI入藏号 | 20250417740381 |
EI主题词 | Solar irradiance |
EI分类号 | 1008.4 |
原始文献类型 | Journal article (JA) |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/474142 |
专题 | 物质科学与技术学院 物质科学与技术学院_硕士生 |
通讯作者 | Meng, Fanying; Yu, Jian; Liu, Wenzhu |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, Res Ctr New Energy Technol RCNET, State Key Lab Mat Integrated Circuits, Shanghai 201800, Peoples R China 2.Univ Chinese Acad Sci UCAS, Beijing 100049, Peoples R China 3.Southwest Petr Univ SWPU, Sch New Energy & Mat, Chengdu 610500, Peoples R China 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 5.Anhui Huasun Energy Co, Xuancheng 242000, Anhui, Peoples R China 6.Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China 7.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Separat Mat & Technol, Urumqi 830011, Peoples R China |
推荐引用方式 GB/T 7714 | Wang, Na,Deng, Qi,Gu, Xuehui,et al. Multi-field coupling challenges the stability test of silicon solar cells[J]. APPLIED PHYSICS LETTERS,2025,126(1). |
APA | Wang, Na.,Deng, Qi.,Gu, Xuehui.,Xu, Xiaohua.,Zhou, Su.,...&Liu, Wenzhu.(2025).Multi-field coupling challenges the stability test of silicon solar cells.APPLIED PHYSICS LETTERS,126(1). |
MLA | Wang, Na,et al."Multi-field coupling challenges the stability test of silicon solar cells".APPLIED PHYSICS LETTERS 126.1(2025). |
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