Ion implantation process and lattice damage mechanism of boron doped crystalline germanium

doi:10.11972/j.issn.1001-9014.2024.06.004

	Ion implantation process and lattice damage mechanism of boron doped crystalline germanium
	Habiba, Um E.1,2; Chen, Tian-Ye1,5 ; Liu, Chi-Xian1,5 ; Dou, Wei1,5 ; Liu, Xiao-Yan 1,3; Ling, Jing-Wei 1; Pan, Chang-Yi 1,3; Wang, Peng 1,2; Deng, Hui-Yong 1,2,4; Shen, Hong 1,2; Dai, Ning 1,2,3,4
	2024-12-01
发表期刊	JOURNAL OF INFRARED AND MILLIMETER WAVES (IF:0.6[JCR-2023],0.5[5-Year])
ISSN	1001-9014
卷号	43 期号:6 页码:749-754
DOI	10.11972/j.issn.1001-9014.2024.06.004
摘要	The response wavelength of the blocked-impurity-band (BIB) structured infrared detector can reach 200 mu m, which is the most important very long wavelength infrared astronomical detector. The ion implantation method greatly simplifies the fabrication process of the device, but it is easy to cause lattice damage, introduce crystalline defects, and lead to the increase of the dark current of detectors. Herein, the boron-doped germanium ion implantation process was studied, and the involved lattice damage mechanism was discussed. Experimental conditions involved using 80 keV energy for boron ion implantation, with doses ranging from 1x1013 cm-2 to 3x1015cm-2. After implantation, thermal annealing at 450 degrees C was implemented to optimize dopant activation and mitigate the effects of ion implantation. Various sophisticated characterization techniques, including X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS) were used to clarify lattice damage. At lower doses, no notable structural alterations were observed. However, as the dosage increased, specific micro distortions became apparent, which could be attributed to point defects and residual strain. The created lattice damage was recovered by thermal treatment, however, an irreversible strain induced by implantation still existed at heavily dosed samples.
关键词	boron doped germanium ion implantation lattice damage
URL	查看原文
收录类别	SCI ; EI
语种	英语
资助项目	National Key R&D Program of China[2023YFA1608701] ; National Natural Science Foundation of China["62274168","11933006","U2141240"] ; Hangzhou Leading Innovation and Entrepreneurship Team[TD2020002]
WOS研究方向	Optics
WOS类目	Optics
WOS记录号	WOS:001384519000004
出版者	SCIENCE PRESS
来源库	cqvip
中图分类号	TN3
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/467882
专题	物质科学与技术学院物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Deng, Hui-Yong; Shen, Hong; Dai, Ning
作者单位	1.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai; 200083, China; 2.University of Chinese Academy of Sciences, Beijing; 100049, China; 3.College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou; 310024, China; 4.Zhejiang Laboratory, Hangzhou; 311100, China; 5.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China
推荐引用方式 GB/T 7714	Habiba, Um E.,Chen, Tian-Ye,Liu, Chi-Xian,et al. Ion implantation process and lattice damage mechanism of boron doped crystalline germanium[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2024,43(6):749-754.
APA	Habiba, Um E..,Chen, Tian-Ye.,Liu, Chi-Xian.,Dou, Wei.,Liu, Xiao-Yan.,...&Dai, Ning.(2024).Ion implantation process and lattice damage mechanism of boron doped crystalline germanium.JOURNAL OF INFRARED AND MILLIMETER WAVES,43(6),749-754.
MLA	Habiba, Um E.,et al."Ion implantation process and lattice damage mechanism of boron doped crystalline germanium".JOURNAL OF INFRARED AND MILLIMETER WAVES 43.6(2024):749-754.