ShanghaiTech University Knowledge Management System
| High-Speed InAlAs Digital Alloy Avalanche Photodiode with Partially Depleted Absorber | |
| 2024-11-05 | |
| 会议录名称 | 2024 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) AND INTERNATIONAL CONFERENCE ON INFORMATION PHOTONICS AND OPTICAL COMMUNICATIONS (IPOC)
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| ISSN | 2162-108X |
| 发表状态 | 已发表 |
| DOI | 10.1109/ACP/IPOC63121.2024.10809925 |
| 摘要 | We demonstrate a high-speed avalanche photodiode (APD) with InAlAs digital alloy multiplication layer and partially depleted absorption layer. The 3-dB bandwidth is up to 13.8 GHz and gain-bandwidth product is about 100 GHz. |
| 会议地点 | Beijing, China |
| 会议日期 | 2-5 Nov. 2024 |
| URL | 查看原文 |
| 来源库 | IEEE |
| 文献类型 | 会议论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/467847 |
| 专题 | 信息科学与技术学院 信息科学与技术学院_博士生 |
| 作者单位 | 1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China 2.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China 3.University of Chinese Academy of Sciences, Beijing, China 4.Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing, China 5.Shanghai Engineering, Research Center of Energy, Efficient and Custom AI IC, Shanghai, China |
| 第一作者单位 | 信息科学与技术学院 |
| 第一作者的第一单位 | 信息科学与技术学院 |
| 推荐引用方式 GB/T 7714 | Wenyang Wang,Jinshan Yao,Hong Lu,et al. High-Speed InAlAs Digital Alloy Avalanche Photodiode with Partially Depleted Absorber[C],2024. |
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