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ShanghaiTech University Knowledge Management System
| High-Order Lamb Wave Mode of 128°Y-cut LiNbO3/SiO2 Resonator Covered with AlN Film Exhibiting Higher Electromechanical Coupling | |
| 2024 | |
| 会议录名称 | 2024 IEEE ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL JOINT SYMPOSIUM (UFFC-JS)
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| ISSN | 1099-4734 |
| 发表状态 | 已发表 |
| DOI | 10.1109/UFFC-JS60046.2024.10794003 |
| 摘要 | In this work, A method was adopted to improve the electromechanical coupling coefficient (k2) of high-order Lamb Wave Resonator (LWR) by covering with Aluminum Nitride (AlN) film. The AlN film with higher acoustic-velocity is deposited on Lithium Niobate (LN or LiNibO3) and Silicon oxide (SiO2) to form a tri-layer structure LWR. Compared with the traditional bi-layer structure LWR composed of LN/SiO2, both the S2 and A3 mode LWRs in this tri-layer structure exhibit higher k2. As the mode order of the Lamb wave increases, the improvement of k2 gradually slows down. The proposed design has great application potential in the field of high-frequency and large-bandwidth wireless communications. |
| 会议地点 | Taipei, Taiwan |
| 会议日期 | 22-26 Sept. 2024 |
| URL | 查看原文 |
| 来源库 | IEEE |
| 文献类型 | 会议论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/464738 |
| 专题 | 信息科学与技术学院_博士生 |
| 作者单位 | 1.School of Microelectronics, Shanghai University, Shanghai, China 2.Weihai Guangtai Airport Equipment Co., Ltd. 3.ShanghaiTech University |
| 推荐引用方式 GB/T 7714 | Feixuan Huang,Guojie Chang,Mingye Du,et al. High-Order Lamb Wave Mode of 128°Y-cut LiNbO3/SiO2 Resonator Covered with AlN Film Exhibiting Higher Electromechanical Coupling[C],2024. |
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