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ARPES study of the epitaxially grown topological crystalline insulator SnTe(111) | |
Zhang, Yi1,2,3; Liu, Zhongkai4,5,6; Zhou, Bo3,7,8; Kim, Yeongkwan3; Yang, Lexian3,7,8,9,10; Ryu, Hyejin3,11; Hwang, Choongyu11,12; Chen, Yulin4,7,8,9,10; Hussain, Zahid3; Shen, Zhi-Xun2,5,6 | |
2017-08 | |
发表期刊 | JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA |
ISSN | 0368-2048 |
卷号 | 219页码:35-40 |
发表状态 | 已发表 |
DOI | 10.1016/j.elspec.2016.10.003 |
摘要 | SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror symmetry, stemming from the band inversion near the L points of its bulk Brillouin zone, which can be measured by angle-resolved photoemission. We have obtained the (111) surface of SnTe film by molecular beam epitaxy on BaF2(111) substrate. Photon-energy-dependence of in situ angle-resolved photoemission, covering multiple Brillouin zones in the direction perpendicular to the (111) surface, demonstrate the projected Dirac cones at the (Gamma) over bar and (M) over bar points of the surface Brillouin zone. In addition, we observe a Dirac-cone-like band structure at the Gamma point of the bulk Brillouin zone, whose Dirac energy is largely different from those at the I, and Pi points. (C) 2016 Elsevier B.V. All rights reserved. |
关键词 | SnTe(111) Topological crystalline insulator Dirac cone ARPES MBE Photoemission Electronic structure |
收录类别 | SCI ; EI |
语种 | 英语 |
资助项目 | Ministry of Science, ICT & Future Planning of Korea[NRF-2011-0031558] |
WOS研究方向 | Spectroscopy |
WOS类目 | Spectroscopy |
WOS记录号 | WOS:000411302600006 |
出版者 | ELSEVIER SCIENCE BV |
EI入藏号 | 20165103147750 |
EI主题词 | Band structure ; Crystalline materials ; Electronic structure ; Molecular beam epitaxy ; Photoemission ; Topology |
WOS关键词 | HGTE QUANTUM-WELLS ; SURFACES ; SNTE |
原始文献类型 | Article |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/4646 |
专题 | 物质科学与技术学院_PI研究组_柳仲楷组 物质科学与技术学院_特聘教授组_陈宇林 |
通讯作者 | Zhang, Yi; Mo, Sung-Kwan |
作者单位 | 1.Nanjing Univ, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China 2.SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA 3.Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA 4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 5.Stanford Univ, Dept Phys, Geballe Lab Adv Mat, Stanford, CA 94305 USA 6.Stanford Univ, Dept Appl Phys, Geballe Lab Adv Mat, Stanford, CA 94305 USA 7.Univ Oxford, Dept Phys, Parks Rd, Oxford OX1 3PU, England 8.Univ Oxford, Clarendon Lab, Parks Rd, Oxford OX1 3PU, England 9.Tsinghua Univ, Collaborat Innovat Ctr Quantum Matter, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China 10.Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, Yi,Liu, Zhongkai,Zhou, Bo,et al. ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA,2017,219:35-40. |
APA | Zhang, Yi.,Liu, Zhongkai.,Zhou, Bo.,Kim, Yeongkwan.,Yang, Lexian.,...&Mo, Sung-Kwan.(2017).ARPES study of the epitaxially grown topological crystalline insulator SnTe(111).JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA,219,35-40. |
MLA | Zhang, Yi,et al."ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)".JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 219(2017):35-40. |
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