ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)
Zhang, Yi1,2,3; Liu, Zhongkai4,5,6; Zhou, Bo3,7,8; Kim, Yeongkwan3; Yang, Lexian3,7,8,9,10; Ryu, Hyejin3,11; Hwang, Choongyu11,12; Chen, Yulin4,7,8,9,10; Hussain, Zahid3; Shen, Zhi-Xun2,5,6
2017-08
发表期刊JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
ISSN0368-2048
卷号219页码:35-40
发表状态已发表
DOI10.1016/j.elspec.2016.10.003
摘要SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror symmetry, stemming from the band inversion near the L points of its bulk Brillouin zone, which can be measured by angle-resolved photoemission. We have obtained the (111) surface of SnTe film by molecular beam epitaxy on BaF2(111) substrate. Photon-energy-dependence of in situ angle-resolved photoemission, covering multiple Brillouin zones in the direction perpendicular to the (111) surface, demonstrate the projected Dirac cones at the (Gamma) over bar and (M) over bar points of the surface Brillouin zone. In addition, we observe a Dirac-cone-like band structure at the Gamma point of the bulk Brillouin zone, whose Dirac energy is largely different from those at the I, and Pi points. (C) 2016 Elsevier B.V. All rights reserved.
关键词SnTe(111) Topological crystalline insulator Dirac cone ARPES MBE Photoemission Electronic structure
收录类别SCI ; EI
语种英语
资助项目Ministry of Science, ICT & Future Planning of Korea[NRF-2011-0031558]
WOS研究方向Spectroscopy
WOS类目Spectroscopy
WOS记录号WOS:000411302600006
出版者ELSEVIER SCIENCE BV
EI入藏号20165103147750
EI主题词Band structure ; Crystalline materials ; Electronic structure ; Molecular beam epitaxy ; Photoemission ; Topology
WOS关键词HGTE QUANTUM-WELLS ; SURFACES ; SNTE
原始文献类型Article
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/4646
专题物质科学与技术学院_PI研究组_柳仲楷组
物质科学与技术学院_特聘教授组_陈宇林
通讯作者Zhang, Yi; Mo, Sung-Kwan
作者单位1.Nanjing Univ, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
2.SLAC Natl Accelerator Lab, Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA
3.Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
5.Stanford Univ, Dept Phys, Geballe Lab Adv Mat, Stanford, CA 94305 USA
6.Stanford Univ, Dept Appl Phys, Geballe Lab Adv Mat, Stanford, CA 94305 USA
7.Univ Oxford, Dept Phys, Parks Rd, Oxford OX1 3PU, England
8.Univ Oxford, Clarendon Lab, Parks Rd, Oxford OX1 3PU, England
9.Tsinghua Univ, Collaborat Innovat Ctr Quantum Matter, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
10.Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
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Zhang, Yi,Liu, Zhongkai,Zhou, Bo,et al. ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA,2017,219:35-40.
APA Zhang, Yi.,Liu, Zhongkai.,Zhou, Bo.,Kim, Yeongkwan.,Yang, Lexian.,...&Mo, Sung-Kwan.(2017).ARPES study of the epitaxially grown topological crystalline insulator SnTe(111).JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA,219,35-40.
MLA Zhang, Yi,et al."ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)".JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 219(2017):35-40.
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