Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy

doi:10.1002/advs.201700076

	Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy
	Lu, Guangyuan 1,2,3,4; Wu, Tianru 1,2; Yang, Peng 5; Yang, Yingchao 3; Jin, Zehua 3; Chen, Weibing 3; Jia, Shuai 3; Wang, Haomin 1,2; Zhang, Guanhua 6; Sun, Julong 6; Ajayan, Pulickel M.3; Lou, Jun 3; Xie, Xiaoming1,2,7 ; Jiang, Mianheng1,2,7
	2017-09
发表期刊	ADVANCED SCIENCE (IF:14.3[JCR-2023],16.3[5-Year])
ISSN	2198-3844
卷号	4 期号:9
发表状态	已发表
DOI	10.1002/advs.201700076
摘要	Graphene/hexagonal boron nitride (h-BN) monolayer in-plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in-plane epitaxy of graphene/h-BN heterostructure is demonstrated on Cu-Ni substrates. The introduction of nickel to copper substrate not only enhances the capability of decomposing polyaminoborane residues but also promotes graphene growth via isothermal segregation. On the alloy surface partially covered by h-BN, graphene is found to nucleate at the corners of the as-formed h-BN grains, and the high growth rate for graphene minimizes the damage of graphene-growth process on h-BN lattice. As a result, high-quality graphene/h-BN in-plane heterostructure with epitaxial relationship can be formed, which is supported by extensive characterizations. Photodetector device applications are demonstrated based on the in-plane heterostructure. The success will have important impact on future research and applications based on this unique material platform.
关键词	chemical vapor deposition Cu-Ni alloy graphene and h-BN in-plane heterostructures high quality
收录类别	SCI
语种	英语
资助项目	Air Force Office of Scientific Research (AFOSR)[FA9550-14-1-0268]
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000411148100015
出版者	WILEY
WOS关键词	CHEMICAL-VAPOR-DEPOSITION ; BAND-GAP ; ATMOSPHERIC-PRESSURE ; STACKED GRAPHENE ; GROWTH ; FILMS ; INTERFACE ; DOMAINS ; LAYERS ; FOILS
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/4640
专题	物质科学与技术学院_特聘教授组_谢晓明组物质科学与技术学院
通讯作者	Lou, Jun
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China 3.Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA 4.Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China 5.Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China 6.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China 7.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
推荐引用方式 GB/T 7714	Lu, Guangyuan,Wu, Tianru,Yang, Peng,et al. Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy[J]. ADVANCED SCIENCE,2017,4(9).
APA	Lu, Guangyuan.,Wu, Tianru.,Yang, Peng.,Yang, Yingchao.,Jin, Zehua.,...&Jiang, Mianheng.(2017).Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy.ADVANCED SCIENCE,4(9).
MLA	Lu, Guangyuan,et al."Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy".ADVANCED SCIENCE 4.9(2017).