Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy

doi:10.1063/1.4990602

	Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy
	Zhu, Zhongyunshen1,2,3 ; Song, Yuxin 1; Zhang, Zhenpu1,2 ; Sun, Hao 1; Han, Yi 1,3; Li, Yaoyao 1; Zhang, Liyao 1; Xue, Zhongying 1; Di, Zengfeng 1; Wang, Shumin1,2,4
	2017-09-07
发表期刊	JOURNAL OF APPLIED PHYSICS (IF:2.7[JCR-2023],2.6[5-Year])
ISSN	0021-8979
卷号	122 期号:9
发表状态	已发表
DOI	10.1063/1.4990602
摘要	We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy at the substrate temperature of similar to 180 degrees C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity, and better fit with Au tips in diameter, in contrast to Ge NWs grown at around or above the eutectic temperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Six < 110 > growth orientations were observed on Ge (110) by the VSS growth at similar to 180 degrees C, differing from only one vertical growth direction of Ge NWs by the VLS growth at a high temperature. The evolution of NWs dimension and morphology from the VLS growth to the VSS growth is qualitatively explained by analyzing the mechanism of the two growth modes. Published by AIP Publishing.
收录类别	SCI ; EI
语种	英语
资助项目	Creative Research Group Project of Natural Science Foundation of China[61321492]
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000409941100017
出版者	AMER INST PHYSICS
EI入藏号	20173704146827
EI主题词	Epitaxial growth ; Integrated circuits ; Molecular beam epitaxy ; Molecular beams ; Nanowires ; Substrates ; Temperature ; Timing circuits
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Thermodynamics:641.1 ; Pulse Circuits:713.4 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Atomic and Molecular Physics:931.3 ; Solid State Physics:933 ; Crystal Growth:933.1.2
WOS关键词	GERMANIUM NANOWIRES ; ORIENTATION ; CATALYSTS ; SILICON ; GOLD
原始文献类型	Article
引用统计	正在获取...
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/4637
专题	物质科学与技术学院信息科学与技术学院_特聘教授组_王庶民组物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Song, Yuxin; Wang, Shumin
作者单位	1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100190, Peoples R China 4.Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
第一作者单位	物质科学与技术学院
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Zhu, Zhongyunshen,Song, Yuxin,Zhang, Zhenpu,et al. Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy[J]. JOURNAL OF APPLIED PHYSICS,2017,122(9).
APA	Zhu, Zhongyunshen.,Song, Yuxin.,Zhang, Zhenpu.,Sun, Hao.,Han, Yi.,...&Wang, Shumin.(2017).Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy.JOURNAL OF APPLIED PHYSICS,122(9).
MLA	Zhu, Zhongyunshen,et al."Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy".JOURNAL OF APPLIED PHYSICS 122.9(2017).