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| Robust Topological Interface States in a Lateral Magnetic-Topological Heterostructure | |
| 2024 | |
| 发表期刊 | SMALL (IF:13.0[JCR-2023],13.5[5-Year]) |
| ISSN | 1613-6810 |
| EISSN | 1613-6829 |
| 卷号 | 21期号:8 |
| 发表状态 | 已发表 |
| DOI | 10.1002/smll.202409979 |
| 摘要 | Introducing uniform magnetic order in two-dimensional (2D) topological insulators by constructing heterostructures of TI and magnet is a promising way to realize the high-temperature Quantum Anomalous Hall effect. However, the topological properties of 2D materials are susceptible to several factors that make them difficult to maintain, and whether topological interface states (TISs) can exist at magnetic-topological heterostructure interfaces is largely unknown. Here, it is experimentally shown that TISs in a lateral heterostructure of CrTe2/Bi(110) are robust against disorder, defects, high magnetic fields (time-reversal symmetry-breaking perturbations), and elevated temperature (77 K). The lateral heterostructure is realized by lateral epitaxial growth of bilayer (BL) Bi to monolayer CrTe2 grown on graphite. Scanning Tunneling Microscopy and non-contact Atomic Force Microscopy demonstrate a black phosphorus-like structure with low atomic buckling (less than 0.1 Å) of the BL Bi(110), indicating the presence of its topological properties. Scanning tunneling spectroscopy and energy-dependent dI/dV mapping further confirm the existence of topologically induced one-dimensional in-gap states localized at the interface. These results demonstrate the robustness of TISs in lateral magnetic-topological heterostructures, which is competitive with those in vertically stacked magnetic-topological heterostructures and provides a promising route for constructing planar high-density non-dissipative devices using TISs. © 2024 Wiley-VCH GmbH. |
| 关键词 | Layered semiconductors Nanocrystals Quantum Hall effect Topological insulators Bi-layer Interfaces state Lateral heterostructure Magnetic orders Scanning tunneling microscopy/spectroscopy Topological Topological insulators Topological properties Two-dimensional Bi(110) CrTe2 lateral heterostructure topological scanning tunneling microscopy/spectroscopy (STM/S) |
| URL | 查看原文 |
| 收录类别 | EI ; PPRN.PPRN ; SCI |
| 语种 | 英语 |
| WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Physics, Condensed Matter |
| WOS记录号 | PPRN:118758632 |
| 出版者 | John Wiley and Sons Inc |
| EI入藏号 | 20245017519698 |
| EI主题词 | Scanning tunneling microscopy |
| EI分类号 | 1004 ; 1301.3.1 ; 1301.4 ; 1301.4.1 ; 712.1.2 Compound Semiconducting Materials ; 761 Nanotechnology |
| 原始文献类型 | Article in Press |
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/461505 |
| 专题 | 物质科学与技术学院 物质科学与技术学院_博士生 物质科学与技术学院_PI研究组_赵爱迪组 物质科学与技术学院_PI研究组_翟晓芳组 |
| 通讯作者 | Zhao, Aidi |
| 作者单位 | 1.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China; 2.Department of Chemical Physics, University of Science and Technology of China, Anhui, Hefei; 230026, China |
| 第一作者单位 | 物质科学与技术学院 |
| 通讯作者单位 | 物质科学与技术学院 |
| 第一作者的第一单位 | 物质科学与技术学院 |
| 推荐引用方式 GB/T 7714 | Niu, Qun,Yao, Jie,Song, Quanchao,et al. Robust Topological Interface States in a Lateral Magnetic-Topological Heterostructure[J]. SMALL,2024,21(8). |
| APA | Niu, Qun.,Yao, Jie.,Song, Quanchao.,Akber, Humaira.,Zhou, Qin.,...&Zhao, Aidi.(2024).Robust Topological Interface States in a Lateral Magnetic-Topological Heterostructure.SMALL,21(8). |
| MLA | Niu, Qun,et al."Robust Topological Interface States in a Lateral Magnetic-Topological Heterostructure".SMALL 21.8(2024). |
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