上海科技大学知识管理系统

The increasing demand for higher performance in memory technology has spurred interest in magnetic random access memory (MRAM). Noncollinear antiferromagnets like Mn₃Sn are promising candidates due to their unique Kagome lattice and the large anomalous Hall effect observed at room temperature. Our previous work highlighted deterministic switching in configuration II of Mn₃Sn. In this work, we further investigate the spin dynamics of Mn3Sn by simulating rotated Kagome plane to match experimental samples. Our results demonstrate the robust spin-orbit torque (SOT) switching of configuration II. We also provide a theoretical model to obtain insights into its electrical manipulation.