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High-Speed Mid-Wave Infrared InAs/InAsSb Superlattice Uni-Traveling Carrier Photodetectors With Different Absorber Doping
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 页码: 1-7
Authors:
Huang, Jian
;
Dai, Zhecheng
;
Shen, Zhijian
;
Wang, Zongti
;
Zhou, Zhiqi
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Submit date:2022/11/25
Frequency response
III-V semiconductors
Indium arsenide
Infrared radiation
Photodetectors
Photons
High speed photodetectors
High-speed photodetector
Ina/inassb type-II superlattix (T2SL)
Infrared photodetector
Mid-wavelength infrared
Mid-wavelength infrared photodetector
Performances evaluation
Type-II superlattices
Uni-traveling carrier photodetector
Uni-traveling carriers
Carrier localization effect in the photoluminescence of In composition engineered InAlAs random alloy
期刊论文
JOURNAL OF LUMINESCENCE, 2022, 卷号: 249
Authors:
Yu, Jiajun
;
Zhao, Yinan
;
Li, Siqi
;
Yao, Jinshan
;
Yao, Lu
Adobe PDF(1019Kb)
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Submit date:2022/06/17
Aluminum alloys
III-V semiconductors
Indium phosphide
Molecular beam epitaxy
Optoelectronic devices
Photoluminescence spectroscopy
Semiconducting indium phosphide
Temperature
Carrier localization effects
In composition engineering
In compositions
Inala random alloy
InP substrates
Localized state
Low temperature photoluminescence
Molecular-beam epitaxy
Random alloy
Spectral structure
Equivalent circuit model of the RF characteristics of multi-stage infrared photodetectors
期刊论文
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2022, 卷号: 40, 期号: 15
Authors:
Chen, Baile
Adobe PDF(1451Kb)
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Submit date:2022/05/20
Bandwidth
Circuit simulation
Efficiency
Equivalent circuits
Infrared detectors
Integrated circuits
Photons
Quantum efficiency
Timing circuits
3 dB bandwidth
Current matching
Equivalent circuit model
ICIP
Infrared photodetector
Integrated circuit modeling
Multi-stage infrared photodetector
Multi-stages
Performances evaluation
Quantum cascade detectors
High-performance InP-based bias-tunable near-infrared /extended-short wave infrared dual-band photodetectors
期刊论文
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2022, 卷号: 40, 期号: 15
Authors:
Wang, Zongti
;
Huang, Jian
;
Zhu, Liqi
;
Zhou, Zhiqi
;
Zhao, Xuyi
Adobe PDF(2362Kb)
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Submit date:2022/05/20
Gallium arsenide
III-V semiconductors
Indium phosphide
Infrared detectors
Infrared radiation
Photons
Pixels
Semiconducting gallium
Semiconducting indium
Semiconducting indium gallium arsenide
Semiconducting indium phosphide
Semiconductor alloys
Dual Band
In0.53Ga0.47As
In0.53ga0.47as PIN
In0.53ga0.47as/gaas0.5 sb0.5 T2SL
Infrared photodetector
Near Infrared
Near-infrared
Near-infrared /extended short wavelength infrared photodetector
Optical crosstalk
Short-wavelength infrared
Single pixel
Single pixel imaging
Power Compression and Phase Analysis of GaN HEMT for Microwave Receiver Protection
期刊论文
ELECTRONICS, 2022, 卷号: 11, 期号: 13
Authors:
Song, Wenhan
;
Guo, Haowen
;
Gu, Yitian
;
Zhou, Junmin
;
Sui, Jin
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Submit date:2022/08/15
gallium nitride (GaN)
high electron mobility transistor (HEMT)
microwave receiver protector (RP)
power compression
phase shift
Monte Carlo Simulation of High-Speed MWIR HgCdTe e-APD
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022
Authors:
Zhou, Zhiqi
;
Zhu, Liqi
;
Xie, Zhiyang
;
Chen, Baile
Adobe PDF(3134Kb)
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Submit date:2022/06/24
Avalanche photodiodes
Bandwidth
II-VI semiconductors
Impact ionization
Infrared radiation
Intelligent systems
Mercury amalgams
Monte Carlo methods
Semiconductor alloys
Avalanche photodiode
Charge carriers process
High Speed
Mercury (metal)
Mercury (metals)
Mid-wavelength infrared
Mid-wavelength infrared .
Monte Carlo's simulation
MonteCarlo methods
Weak signal detection
High-speed Ge-on-GaAs photodetector
期刊论文
OPTICS EXPRESS, 2022, 卷号: 30, 期号: 12
Authors:
Li, Linze
;
Pan, Rui
;
Xie, Zhiyang
;
Lu, Yao
;
Chen, Jiaxiang
Adobe PDF(9134Kb)
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Submit date:2022/06/10
Capacitance
Deep level transient spectroscopy
III-V semiconductors
Photodetectors
Photons
Semiconducting gallium
1550 nm
3 dB bandwidth
Back-illuminated
Capacitance-voltage curve
Deep levels transient spectroscopy
Germaniums (Ge)
High Speed
Monolithic integration
Optical response
Responsivity
Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022
Authors:
Adobe PDF(1571Kb)
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Submit date:2022/05/18
Logic gates
HEMTs
Threshold voltage
Temperature measurement
Voltage measurement
MODFETs
Performance evaluation
Dynamic characteristics
GaN HEMT
low temperature electronics
p-type GaN gate
Dark current and noise analysis for Long-wavelength infrared HgCdTe avalanche photodiodes
期刊论文
INFRARED PHYSICS AND TECHNOLOGY, 2022, 卷号: 123
Authors:
Adobe PDF(3596Kb)
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Submit date:2022/03/25
Avalanche photodiodes
Cadmium alloys
Dark currents
II-VI semiconductors
Infrared devices
Infrared radiation
Noise figure
Spectral density
Band-to-band tunnelling
Dark noise
Dependent characteristics
Excess noise factor
Hgcdte avalanche photodiode
High gain
Long-wavelength infrared
Noise
Temperature dependent
Temperature-dependent characteristic
Study of Minority Carrier Traps in p-GaN Gate HEMT by Optical Deep Level Transient Spectroscopy
期刊论文
APPLIED PHYSICS LETTERS, 2022, 卷号: 120, 期号: 21, 页码: 212105
Authors:
Jiaxiang Chen
;
Wei Huang
;
Haolan Qu
;
Yu Zhang
;
Jianjun Zhou
Adobe PDF(1775Kb)
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Submit date:2022/06/10