ShanghaiTech University Knowledge Management System
Terahertz semiconductor laser chaos | |
2024-10-26 | |
状态 | 已发表 |
摘要 | Chaos characterized by its irregularity and high sensitivity to initial conditions finds various applications in secure optical communications, random number generations, light detection and ranging systems, etc. Semiconductor lasers serve as ideal light platforms for chaos generations owing to the advantages in on-chip integration and complex nonlinear effects. In nearinfrared wavelengths, semiconductor laser based chaotic light sources have been extensively studied and experimentally demonstrated. However, in the terahertz (THz) spectral range, due to the lack of effective THz light sources and high-speed detectors, chaos generation in THz semiconductor lasers, e.g., quantum cascade lasers (QCLs), is particularly challenging. Due to the fast intersubband carrier transitions, single mode THz QCLs resemble Class A lasers, where chaos can be hardly excited, even with external perturbations. In this work, we experimentally show a THz chaos source based on a sole multimode THz QCL without any external perturbations. Such a dynamical regime is characterized by the largest Lyapunov exponent associated to the temporal traces of the measured radio frequency (intermode beatnote) signal of the laser. The experimental results and chaos validation are confirmed by simulations of our model based on effective semiconductor Maxwell-Bloch Equations. To further understand the physical mechanism of the chaos generation in THz QCLs, a reduced model based on two coupled complex Ginzburg-Landau equations is derived from the full model cited above to systematically investigate the effects of the linewidth enhancement factor and group velocity dispersion on the chaotic regime. This model allows us to show that the chaos generation in the THz QCL can be ascribed to the system attaining the defect mediated turbulence regime. Our findings pave the way for the generation of controllable and integrated THz chaos sources, as well as potential applications. |
语种 | 英语 |
DOI | arXiv:2410.20099 |
相关网址 | 查看原文 |
出处 | Arxiv |
收录类别 | PPRN.PPRN |
WOS记录号 | PPRN:118942814 |
WOS类目 | Optics |
资助项目 | Science and Technology Commission of Shanghai Municipality[21ZR1474600] ; Innovation Program for Quantum Science and Technology[2023ZD0301000] ; National Natural Science Foundation of China["62235019","61875220","61927813","61991430","62035005","62105351","62275258","62035014","62305364"] ; From 0 to 1 Innovation Program of the Chinese Academy of Sciences[ZDBS-LY-JSC009] ; Italian Ministerial PRIN project MIRABILIS[CUPM. D53D23002780006] ; CAS Project for Young Scientists in Basic Research[YSBR-069] ; National Science Fund for Distinguished Young Scholars[62325509] |
文献类型 | 预印本 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/458365 |
专题 | 信息科学与技术学院 信息科学与技术学院_PI研究组_王成组 |
通讯作者 | Zeng, Heping; Columbo, Lorenzo; Li, Hua |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Mat Integrated Circuits, 865 Changning Rd, Shanghai 200050, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Solid State Technol, 865 Changning Rd, Shanghai 200050, Peoples R China 3.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 4.Univ Sydney, Inst Photon & Opt Sci IPOS, Sch Phys, Sydney 2006, NSW, Australia 5.East China Normal Univ, State Key Lab Precis Spect, Shanghai 200241, Peoples R China 6.Chongqing Inst East China Normal Univ, Chongqing Key Lab Precis Opt, Chongqing 401120, Peoples R China 7.ShanghaiTech Univ, Sch Informat Sci & Technol, 393 Middle Huaxia Rd, Shanghai 201210, Peoples R China 8.Politecn Bari & CNR IFN UOS Bari, Dipartimento Interateneo Fis, Via Amendola 173, IT-70126 Bari, Italy 9.Dipartimento Elettron & Telecomunicazioni, Politecn Torino, Corso Duca Abruzzi 24, IT-10129 Torino, Italy |
推荐引用方式 GB/T 7714 | Liu, Binbin,Silvestri, Carlo,Zhou, Kang,et al. Terahertz semiconductor laser chaos. 2024. |
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