ShanghaiTech University Knowledge Management System
| Endurance characteristics of phase change memory cells | |
| 2016-05 | |
| 发表期刊 | JOURNAL OF SEMICONDUCTORS
 |
| ISSN | 1674-4926 |
| 卷号 | 37期号:5 |
| 发表状态 | 已发表 |
| DOI | 10.1088/1674-4926/37/5/054009 |
| 摘要 | The endurance characteristics of phase change memory are studied. With operational cycles, the resistances of reset and set states gradually change to the opposite direction. What is more, the operational conditions that are needed are also discussed. The failure and the changes are concerned with the compositional change of the phase change material. An abnormal phenomenon that the threshold voltage decreases slightly at first and then increases is observed, which is due to the coaction of interface contact and growing active volume size changing. |
| 关键词 | phase change memory endurance compositional change threshold voltage |
| 收录类别 | ESCI |
| 语种 | 英语 |
| 资助项目 | Science and Technology Council of Shanghai[12nm0503701] ; Science and Technology Council of Shanghai[13DZ2295700] ; Science and Technology Council of Shanghai[12QA1403900] ; Science and Technology Council of Shanghai[13ZR1447200] ; Science and Technology Council of Shanghai[14ZR1447500] |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| WOS记录号 | WOS:000382586500012 |
| 出版者 | IOP PUBLISHING LTD |
| 原始文献类型 | Article |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/45760 |
| 专题 | 物质科学与技术学院_硕士生 |
| 通讯作者 | Huo Ruru |
| 作者单位 | 1.Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China 2.Shanghai Tech Univ, Shanghai 200031, Peoples R China |
| 第一作者单位 | 上海科技大学 |
| 通讯作者单位 | 上海科技大学 |
| 推荐引用方式 GB/T 7714 | Huo Ruru,Cai Daolin,Chen, Bomy,et al. Endurance characteristics of phase change memory cells[J]. JOURNAL OF SEMICONDUCTORS,2016,37(5). |
| APA | Huo Ruru.,Cai Daolin.,Chen, Bomy.,Chen Yifeng.,Wang Yuchan.,...&Song Zhitang.(2016).Endurance characteristics of phase change memory cells.JOURNAL OF SEMICONDUCTORS,37(5). |
| MLA | Huo Ruru,et al."Endurance characteristics of phase change memory cells".JOURNAL OF SEMICONDUCTORS 37.5(2016). |
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