Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate

doi:10.1364/OE.27.016195

	Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate
	Jiang, Jie'an1,2,3 ; Xu, Houqiang 2,3; Sheikhi, Moheb 2,3; Li, Liang 2,3,4; Yang, Zhenhai 2,5; Hoo, Jason 6; Guo, Shiping 6; Zeng, Yuheng 2; Guo, Wei 2; Ye, Jichun 2,3
	2019-05-27
发表期刊	OPTICS EXPRESS
ISSN	1094-4087
卷号	27 期号:11 页码:16195-16205
发表状态	已发表
DOI	10.1364/OE.27.016195
摘要	The optical properties of hexagonal GaN microdisk arrays grown on sapphire substrates by selective area growth (SAG) technique were investigated both experimentally and theoretically. Whispering-gallery-mode (WGM) lasing is observed from various directions of the GaN pyramids collected at room temperature, with the dominant lasing mode being Transverse-Electric (TE) polarized. A relaxation of compressive strain in the lateral overgrown region of the GaN microdisk is illustrated by photoluminescence (PL) mapping and Raman spectroscopy. A strong correlation between the crystalline quality: and lasing behavior of the GaN microdisks was also demonstrated. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
收录类别	SCI ; SCIE ; EI
资助项目	Zhejiang Provincial Natural Science Foundation[LY15F040003]
WOS研究方向	Optics
WOS类目	Optics
WOS记录号	WOS:000469227200092
出版者	OPTICAL SOC AMER
EI入藏号	20192306999401
EI主题词	Gallium nitride ; III-V semiconductors ; Optical properties ; Optical resonators ; Sapphire ; Substrates
EI分类号	Gems:482.2.1 ; Waveguides:714.3 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3
WOS关键词	STRESS
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/45626
专题	物质科学与技术学院_硕士生物质科学与技术学院_博士生
通讯作者	Guo, Wei; Ye, Jichun
作者单位	1.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 2.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China 5.Univ Nottingham Ningbo China, Fac Sci & Engn, Dept Elect & Elect Engn, Ningbo 315100, Zhejiang, Peoples R China 6.Adv Ficrofabricat Equipment Inc, Shanghai 201201, Peoples R China
第一作者单位	物质科学与技术学院
第一作者的第一单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Jiang, Jie'an,Xu, Houqiang,Sheikhi, Moheb,et al. Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate[J]. OPTICS EXPRESS,2019,27(11):16195-16205.
APA	Jiang, Jie'an.,Xu, Houqiang.,Sheikhi, Moheb.,Li, Liang.,Yang, Zhenhai.,...&Ye, Jichun.(2019).Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate.OPTICS EXPRESS,27(11),16195-16205.
MLA	Jiang, Jie'an,et al."Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate".OPTICS EXPRESS 27.11(2019):16195-16205.