Novel Bulk Quantum Hall Effect in Nanostructured TaP Macroscopic Crystals
2024-11-01
发表期刊NANO LETTERS (IF:9.6[JCR-2023],10.1[5-Year])
ISSN1530-6984
EISSN1530-6992
卷号24期号:46页码:14625-14631
发表状态已发表
DOI10.1021/acs.nanolett.4c03601
摘要

Bulk quantum Hall effect (QHE), the natural extension of the two-dimensional (2D) QHE, is one of the representative phenomena of coherent electron transport. However, bulk QHE has rarely been reported in real materials with macroscopic sizes. Here, we report a novel bulk QHE in macroscopic millimeter-sized and nanostructured TaP crystals consisting of nanometer-scale lamellae. Specifically, the simultaneous quantum plateaus were observed in both transverse resistivity rho xy and vertical resistivity rho zz . The bulk QHE is attributable to synergetic action between Landau cyclotron movement under magnetic field B and periodically modulated potential due to the nanometer-scaled lamellae. This mechanism would form the fixed number of edge states along B-perpendicular and B-parallel directions respectively, equivalent to stacked 2D-QHE layers, leading to quantized rho xy and rho zz . Our work verifies that microstructure engineering could result in the coherent transport of electrons and generate new quantum phenomena in bulk materials.

关键词bulk quantum Hall effect nanostructured crystals resistivity plateau periodic modulation coherenttransport
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收录类别SCI ; EI
语种英语
资助项目National Natural Science Foundation of China[51721001] ; Foundation for Innovative Research Groups of the National Natural Science Foundation of China[
WOS研究方向Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:001347547400001
出版者AMER CHEMICAL SOC
EI入藏号20244717394753
EI主题词Nanocrystals
EI分类号1301.4.1 ; 701.1 Electricity: Basic Concepts and Phenomena ; 715 Electronic Equipment, General Purpose and Industrial ; 761 Nanotechnology
原始文献类型Journal article (JA)
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/446035
专题物质科学与技术学院
物质科学与技术学院_PI研究组_刘晓平组
通讯作者Yao, Shu-Hua; Chen, Yan-Bin
作者单位
1.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
2.Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China
3.Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
4.Nanjing Normal Univ, Coll Phys Sci & Technol, Nanjing 210097, Peoples R China
5.Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
6.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
推荐引用方式
GB/T 7714
Lv, Yang-Yang,Cao, Lin,Han, Shuang,et al. Novel Bulk Quantum Hall Effect in Nanostructured TaP Macroscopic Crystals[J]. NANO LETTERS,2024,24(46):14625-14631.
APA Lv, Yang-Yang.,Cao, Lin.,Han, Shuang.,Luo, Ye-Cheng.,Zhou, Jian.,...&Chen, Yan-Bin.(2024).Novel Bulk Quantum Hall Effect in Nanostructured TaP Macroscopic Crystals.NANO LETTERS,24(46),14625-14631.
MLA Lv, Yang-Yang,et al."Novel Bulk Quantum Hall Effect in Nanostructured TaP Macroscopic Crystals".NANO LETTERS 24.46(2024):14625-14631.
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