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Novel Bulk Quantum Hall Effect in Nanostructured TaP Macroscopic Crystals | |
2024-11-01 | |
发表期刊 | NANO LETTERS (IF:9.6[JCR-2023],10.1[5-Year]) |
ISSN | 1530-6984 |
EISSN | 1530-6992 |
卷号 | 24期号:46页码:14625-14631 |
发表状态 | 已发表 |
DOI | 10.1021/acs.nanolett.4c03601 |
摘要 | Bulk quantum Hall effect (QHE), the natural extension of the two-dimensional (2D) QHE, is one of the representative phenomena of coherent electron transport. However, bulk QHE has rarely been reported in real materials with macroscopic sizes. Here, we report a novel bulk QHE in macroscopic millimeter-sized and nanostructured TaP crystals consisting of nanometer-scale lamellae. Specifically, the simultaneous quantum plateaus were observed in both transverse resistivity rho xy and vertical resistivity rho zz . The bulk QHE is attributable to synergetic action between Landau cyclotron movement under magnetic field B and periodically modulated potential due to the nanometer-scaled lamellae. This mechanism would form the fixed number of edge states along B-perpendicular and B-parallel directions respectively, equivalent to stacked 2D-QHE layers, leading to quantized rho xy and rho zz . Our work verifies that microstructure engineering could result in the coherent transport of electrons and generate new quantum phenomena in bulk materials. |
关键词 | bulk quantum Hall effect nanostructured crystals resistivity plateau periodic modulation coherenttransport |
URL | 查看原文 |
收录类别 | SCI ; EI |
语种 | 英语 |
资助项目 | National Natural Science Foundation of China[51721001] ; Foundation for Innovative Research Groups of the National Natural Science Foundation of China[ |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
WOS记录号 | WOS:001347547400001 |
出版者 | AMER CHEMICAL SOC |
EI入藏号 | 20244717394753 |
EI主题词 | Nanocrystals |
EI分类号 | 1301.4.1 ; 701.1 Electricity: Basic Concepts and Phenomena ; 715 Electronic Equipment, General Purpose and Industrial ; 761 Nanotechnology |
原始文献类型 | Journal article (JA) |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/446035 |
专题 | 物质科学与技术学院 物质科学与技术学院_PI研究组_刘晓平组 |
通讯作者 | Yao, Shu-Hua; Chen, Yan-Bin |
作者单位 | 1.Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China 2.Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China 3.Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China 4.Nanjing Normal Univ, Coll Phys Sci & Technol, Nanjing 210097, Peoples R China 5.Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China 6.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China |
推荐引用方式 GB/T 7714 | Lv, Yang-Yang,Cao, Lin,Han, Shuang,et al. Novel Bulk Quantum Hall Effect in Nanostructured TaP Macroscopic Crystals[J]. NANO LETTERS,2024,24(46):14625-14631. |
APA | Lv, Yang-Yang.,Cao, Lin.,Han, Shuang.,Luo, Ye-Cheng.,Zhou, Jian.,...&Chen, Yan-Bin.(2024).Novel Bulk Quantum Hall Effect in Nanostructured TaP Macroscopic Crystals.NANO LETTERS,24(46),14625-14631. |
MLA | Lv, Yang-Yang,et al."Novel Bulk Quantum Hall Effect in Nanostructured TaP Macroscopic Crystals".NANO LETTERS 24.46(2024):14625-14631. |
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