Unique Quantum Metallic State in Ti<sub>2</sub>O<sub>3</sub>/GaN

doi:10.1021/acsaelm.4c01291

	Unique Quantum Metallic State in Ti₂O₃/GaN
	Zhang, Guanqun 1,2; Liu, Yixin 3,4; Ning, Zhongfeng 1,2; Li, Guoan 5,6; Wang, Jinghui7 ; Wu, Yueshen7 ; Wang, Lijie 1,2; Xue, Huanyi 1,2; Gao, Chunlei 1,2,8; An, Zhenghua 1,2,8; Li, Jun7 ; Shen, Jie 5,9; Mu, Gang 3,4; Chen, Yan 1,2; Li, Wei 1,2
	2024-11-26
发表期刊	ACS APPLIED ELECTRONIC MATERIALS (IF:4.3[JCR-2023],4.4[5-Year])
EISSN	2637-6113
卷号	6 期号:11 页码:7915-7922
发表状态	已发表
DOI	10.1021/acsaelm.4c01291
摘要	The emergence of quantum metallic state marked by a saturating finite electrical resistance in the zero-temperature limit in a variety of 2D superconductors injects an exciting momentum into the realm of heterostructure superconductivity. Despite much research effort over the last few decades, there is not yet a general consensus on the nature of this unexpected quantum metal. Here, we report the observation of a unique quantum metallic state within the hallmark of Bose-metal in Ti2O3/GaN. Remarkably, the quantum bosonic metallic state continuously tuned by a magnetic field in the vicinity of the two-dimensional superconductivity-metal transition persists in the normal phase, indicating the existence of composite bosons formed by electron Cooper pairs even in the normal phase. Our findings provide distinct evidence for electron pairing in the normal phase of heterointerface superconductors and shed fresh light on the pairing nature underlying heterointerface superconductivity.
关键词	heterointerface two dimensions superconductivity quantum metal electron Cooper pairs
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收录类别	SCI
语种	英语
资助项目	National Natural Science Foundation of China["11927807","92065203","12174430"] ; National Natural Science Foundation of China[XDB33000000] ; Strategic Priority Research Program B of Chinese Academy of Sciences[Z211100002121144] ; Beijing Nova Program["23ZR1404600","20DZ1100604"]
WOS研究方向	Engineering ; Materials Science
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary
WOS记录号	WOS:001340260200001
出版者	AMER CHEMICAL SOC
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/445516
专题	物质科学与技术学院物质科学与技术学院_PI研究组_李军组物质科学与技术学院_PI研究组_张石磊组
通讯作者	Mu, Gang; Chen, Yan; Li, Wei
作者单位	1.Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China 2.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Natl Key Lab Mat Integrated Circuits, Shanghai 200050, Peoples R China 4.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 5.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 6.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China 7.ShanghaiTech Univ, Sch Phys Sci & Technol, ShanghaiTech Lab Topol Phys, Shanghai 201210, Peoples R China 8.Fudan Univ, Inst Nanoelect Devices & Quantum Comp, Shanghai 200433, Peoples R China 9.Songshan Lake Mat Lab, Dongguan 523808, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Guanqun,Liu, Yixin,Ning, Zhongfeng,et al. Unique Quantum Metallic State in Ti₂O₃/GaN[J]. ACS APPLIED ELECTRONIC MATERIALS,2024,6(11):7915-7922.
APA	Zhang, Guanqun.,Liu, Yixin.,Ning, Zhongfeng.,Li, Guoan.,Wang, Jinghui.,...&Li, Wei.(2024).Unique Quantum Metallic State in Ti₂O₃/GaN.ACS APPLIED ELECTRONIC MATERIALS,6(11),7915-7922.
MLA	Zhang, Guanqun,et al."Unique Quantum Metallic State in Ti₂O₃/GaN".ACS APPLIED ELECTRONIC MATERIALS 6.11(2024):7915-7922.