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Achieving a Noise Limit with a Few-layer WSe2 Avalanche Photodetector at Room Temperature | |
2024-09-01 | |
发表期刊 | NANO LETTERS (IF:9.6[JCR-2023],10.1[5-Year]) |
ISSN | 1530-6984 |
EISSN | 1530-6992 |
卷号 | 24期号:42页码:13255-13262 |
发表状态 | 已发表 |
DOI | 10.1021/acs.nanolett.4c03450 |
摘要 | We engineered a two-dimensional Pt/WSe2/Ni avalanche photodetector (APD) optimized for ultraweak signal detection at room temperature. By fine-tuning the work functions, we achieved an ultralow dark current of 10(-14) A under small bias, with a noise equivalent power (NEP) of 8.09 fW/Hz(1/2). This performance is driven by effective dark barrier blocking and a record-long electron mean free path (123 nm) in intrinsic WSe2, minimizing dark carrier replenishment and suppressing noise under an ultralow electric field. Our APD exhibits a high gain of 5 x 10(5) at a modulation frequency of 20 kHz, effectively balancing gain and bandwidth, a common challenge in traditional photovoltaic-based APDs. By addressing the typical challenges of high noise and low gain and minimizing dependence on high electric fields, this work highlights the potential of 2D materials in developing efficient, low-power, and ultrasensitive photodetections. |
关键词 | WSe2 avalanche excess noise meanfree path room temperature high gain |
URL | 查看原文 |
收录类别 | SCI ; EI |
语种 | 英语 |
资助项目 | National Key Research and Development Program of China[2023YFA1406900] ; Strategic Priority Research Program (B) of Chinese Academy of Sciences[ |
WOS研究方向 | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
WOS类目 | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
WOS记录号 | WOS:001320400700001 |
出版者 | AMER CHEMICAL SOC |
EI入藏号 | 20244117173870 |
EI主题词 | Surface discharges |
EI分类号 | 701.1 Electricity: Basic Concepts and Phenomena ; 712.1.2 Compound Semiconducting Materials ; 714.2 Semiconductor Devices and Integrated Circuits ; 804.2 Inorganic Compounds |
原始文献类型 | Article in Press |
引用统计 | 正在获取...
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文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/430434 |
专题 | 物质科学与技术学院 物质科学与技术学院_特聘教授组_陈效双组 物质科学与技术学院_特聘教授组_陆卫组 物质科学与技术学院_博士生 |
通讯作者 | Li, Guanhai |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China 2.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Peoples R China 5.Shanghai Res Ctr Quantum Sci, Shanghai 201315, Peoples R China |
第一作者单位 | 物质科学与技术学院 |
推荐引用方式 GB/T 7714 | Li, Xin,Chen, Jin,Yu, Feilong,et al. Achieving a Noise Limit with a Few-layer WSe2 Avalanche Photodetector at Room Temperature[J]. NANO LETTERS,2024,24(42):13255-13262. |
APA | Li, Xin,Chen, Jin,Yu, Feilong,Chen, Xiaoshuang,Lu, Wei,&Li, Guanhai.(2024).Achieving a Noise Limit with a Few-layer WSe2 Avalanche Photodetector at Room Temperature.NANO LETTERS,24(42),13255-13262. |
MLA | Li, Xin,et al."Achieving a Noise Limit with a Few-layer WSe2 Avalanche Photodetector at Room Temperature".NANO LETTERS 24.42(2024):13255-13262. |
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