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Commensurate and Incommensurate Chern Insulators in Magic-angle Bilayer Graphene | |
2024-08-22 | |
状态 | 已发表 |
摘要 | The interplay between strong electron-electron interaction and symmetry breaking can have profound influence on the topological properties of materials. In magic angle twisted bilayer graphene (MATBG), the flat band with a single SU(4) flavor associated with the spin and valley degrees of freedom gains non-zero Chern number when C2z symmetry or C2zT symmetry is broken. Electron-electron interaction can further lift the SU(4) degeneracy, leading to the Chern insulator states. Here we report a complete sequence of zero-field Chern insulators at all odd integer fillings (v = ±1, +-3) with different chirality (C = 1 or -1) in hBN aligned MATBG which structurally breaks C2z symmetry. The Chern states at hole fillings (v = -1, -3), which are firstly observed in this work, host an opposite chirality compared with the electron filling scenario. By slightly doping the v = ±3 states, we have observed new correlated insulating states at incommensurate moiré fillings which is highly suggested to be intrinsic Wigner crystals according to our theoretical calculations. Remarkably, we have observed prominent Streda-formula violation around v = -3 state. By doping the Chern gap at v = -3 with notable number of electrons at finite magnetic field, the Hall resistance Ryx robustly quantizes to ~ h/e2 whereas longitudinal resistance Rxx vanishes, indicating that the chemical potential is pinned within a Chern gap, forming an incommensurate Chern insulator. By providing the first experimental observation of zero-field Chern insulators in the flat valence band, our work fills up the overall topological framework of MATBG with broken C2z symmetry. Our findings also demonstrate that doped topological flat band is an ideal platform to investigate exotic incommensurate correlated topological states. |
DOI | arXiv:2408.12509 |
相关网址 | 查看原文 |
出处 | Arxiv |
WOS记录号 | PPRN:91507508 |
WOS类目 | Physics, Condensed Matter |
文献类型 | 预印本 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/415916 |
专题 | 物质科学与技术学院 物质科学与技术学院_博士生 物质科学与技术学院_PI研究组_刘健鹏组 |
通讯作者 | Lu, Xiaobo |
作者单位 | 1.Peking Univ, Int Ctr Quantum Mat, Sch Phys, Beijing 100871, Peoples R China 2.Univ Elect Sci & Technol China, Natl Engn Res Ctr Electromagnet Radiat Control Mat, Chengdu 611731, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China 4.Peking Univ, Frontiers Sci Ctr Nanooptoelectron, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 5.Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Nanophoton Mat & Devices, CAS Key Lab Standardizat & Measurement Nanotechnol, Beijing 100871, Peoples R China 6.Natl Inst Mat Sci, Res Ctr Elect & Opt Mat, 1-1 Namiki, Tsukuba 3050044, Japan 7.Natl Inst Mat Sci, Res Ctr Mat Nanoarchitecton, 1-1 Namiki, Tsukuba 3050044, Japan 8.Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China 9.Univ Elect Sci & Technol China, Sch Mat & Energy, Chengdu 611731, Peoples R China 10.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China 11.Hefei Natl Lab, Hefei 230088, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, Zaizhe,Yang, Jingxin,Xie, Bo,et al. Commensurate and Incommensurate Chern Insulators in Magic-angle Bilayer Graphene. 2024. |
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