Probing Electron Density in Quantum Wells and its Impact on the Performance of Infrared Photodetectors

doi:10.1109/LED.2024.3439548

	Probing Electron Density in Quantum Wells and its Impact on the Performance of Infrared Photodetectors
	Rui Xin 1,2; Ning Li 1,2; Hui Xia 1,2; Xinyang Jiang1,3 ; Li Yu1,3 ; Weiwei Liu 1,2; Tianxin Li 1
	2024-10-01
发表期刊	IEEE ELECTRON DEVICE LETTERS (IF:4.1[JCR-2023],4.2[5-Year])
ISSN	0741-3106
EISSN	1558-0563
卷号	45 期号:10 页码:1740-1743
发表状态	已发表
DOI	10.1109/LED.2024.3439548
摘要	For quantum well (QW) photodetectors and lasers, doping to obtain desired electron density in QWs is a critical factor to realize the optimal device behavior. In this study, we employed scanning spreading resistance microscopy (SSRM) to resolve the carriers in individual QWs, and investigate the relevance between carrier concentration and the performance of three Quantum Well Infrared Photodetectors (QWIPs) with n-type density designed as 2.5 x 10(17) cm(-3), 5 x 10(17) cm(-3) and 2 x 10(18 )cm(-3) respectively. It's found that the actual dopant densities of silicon in QWs obtained by secondary ions mass spectroscopy (SIMS) can be considerably deviate from the nominal values. Meanwhile the electron concentrations in QWs estimated from the SSRM measurement are 2.4 x 10(17) cm(-3), 4.7 x 10(17) cm(-3) and 1.0 x 10(18) cm(-3) respectively, which accounts for the increment of the responsivity and the degradation in dark current among the three QWIPs. The SSRM study dicloses the insuffcient activation of Si dopant in nano-sized GaAs QWs, and in another aspect, it confirms the optimal carrier concentration for realizing ideal signal-to-noise ratio of the QWIPs.
关键词	SSRM QWIPs thermionic emission model electron concentration electron concentration dark current dark current responsivity responsivity dark current responsivity
URL	查看原文
收录类别	EI ; SCI
语种	英语
资助项目	Chinese Academy of Sciences["GJ0090406","XDB0580000"] ; National Natural Science Foundation of China["12393833","U2241219","11991063","12227901"] ; Science and Technology Commission of Shanghai Municipality["21TS1400900","23JC1404100"]
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:001327759300009
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
来源库	IEEE
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/414174
专题	物质科学与技术学院物质科学与技术学院_博士生
作者单位	1.Shanghai Institute of Technical Physics, State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, China 2.University of Chinese Academy of Science, Beijing, China 3.School of Physical Science and Technology, ShanghaiTech University, Shanghai, China
推荐引用方式 GB/T 7714	Rui Xin,Ning Li,Hui Xia,et al. Probing Electron Density in Quantum Wells and its Impact on the Performance of Infrared Photodetectors[J]. IEEE ELECTRON DEVICE LETTERS,2024,45(10):1740-1743.
APA	Rui Xin.,Ning Li.,Hui Xia.,Xinyang Jiang.,Li Yu.,...&Tianxin Li.(2024).Probing Electron Density in Quantum Wells and its Impact on the Performance of Infrared Photodetectors.IEEE ELECTRON DEVICE LETTERS,45(10),1740-1743.
MLA	Rui Xin,et al."Probing Electron Density in Quantum Wells and its Impact on the Performance of Infrared Photodetectors".IEEE ELECTRON DEVICE LETTERS 45.10(2024):1740-1743.