Fractional Chern insulator states in multilayer graphene moiré superlattices
2024-08-15
发表期刊PHYSICAL REVIEW B (IF:3.2[JCR-2023],3.3[5-Year])
ISSN2469-9950
EISSN2469-9969
卷号110期号:7
发表状态已发表
DOI10.1103/PhysRevB.110.075109
摘要

In this work, we theoretically study the fractional Chern insulator (FCI) states in rhombohedral multilayer graphene moiré superlattices. We start from the highest energy scale (∼2eV) of the continuum model, and construct a renormalized low-energy model that applies to a lower cutoff ∼0.15eV using a renormalization group approach. Then, we study the ground states of the renormalized low-energy model at filling 1 under the Hartree-Fock approximation in the presence of tunable but self-consistently screened displacement field D with several experimentally relevant background dielectric constants ϵr. Focusing on the pentalayer moiré graphene system, two competing Hartree-Fock states are obtained at filling 1, which give rise to two types of topologically distinct isolated flat bands with Chern numbers 1 and 0, respectively. By hole-doping the isolated topological flat bands, both Laughlin-type and composite-fermion-type FCI states can be obtained through exact-diagonalization calculations at different fractional filling factors, which exhibit quantitative consistency with experimental measurements. We further explore the correlated topological states in generic rhombohedral multilayer graphene moiré superlattices, and find that FCI states may also emerge in tetralayer and hexalayer moiré graphene systems. © 2024 American Physical Society.

关键词Continuum mechanics Graphene Ground state Hartree approximation Molecular physics Multilayers Statistical mechanics Continuum model Displacement field Energy model Energy scale Flat band Hartree-Fock approximations Lower energies Multilayer graphene Renormalization group approach Tunables
URL查看原文
收录类别SCI ; EI
语种英语
资助项目National Key R&D Program of China[2020YFA0309601] ; National Natural Science Foundation of China[12174257] ; Science and Technology Commission of Shanghai Municipality[21JC1405100]
WOS研究方向Materials Science ; Physics
WOS类目Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号WOS:001286577900001
出版者American Physical Society
EI入藏号20243316866047
EI主题词Filling
EI分类号691.2 Materials Handling Methods ; 761 Nanotechnology ; 804 Chemical Products Generally ; 921.6 Numerical Methods ; 922.2 Mathematical Statistics ; 931.1 Mechanics ; 931.3 Atomic and Molecular Physics
原始文献类型Journal article (JA)
引用统计
被引频次:14[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/411226
专题物质科学与技术学院
生命科学与技术学院_硕士生
物质科学与技术学院_博士生
物质科学与技术学院_PI研究组_刘健鹏组
通讯作者Liu, Jianpeng
作者单位
1.School of Physical Science and Technology, ShanghaiTech University, Shanghai; 201210, China
2.ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai; 201210, China
3.Liaoning Academy of Materials, Shenyang; 110167, China
第一作者单位物质科学与技术学院
通讯作者单位物质科学与技术学院;  上海科技大学
第一作者的第一单位物质科学与技术学院
推荐引用方式
GB/T 7714
Guo, Zhongqing,Lu, Xin,Xie, Bo,et al. Fractional Chern insulator states in multilayer graphene moiré superlattices[J]. PHYSICAL REVIEW B,2024,110(7).
APA Guo, Zhongqing,Lu, Xin,Xie, Bo,&Liu, Jianpeng.(2024).Fractional Chern insulator states in multilayer graphene moiré superlattices.PHYSICAL REVIEW B,110(7).
MLA Guo, Zhongqing,et al."Fractional Chern insulator states in multilayer graphene moiré superlattices".PHYSICAL REVIEW B 110.7(2024).
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
个性服务
查看访问统计
谷歌学术
谷歌学术中相似的文章
[Guo, Zhongqing]的文章
[Lu, Xin]的文章
[Xie, Bo]的文章
百度学术
百度学术中相似的文章
[Guo, Zhongqing]的文章
[Lu, Xin]的文章
[Xie, Bo]的文章
必应学术
必应学术中相似的文章
[Guo, Zhongqing]的文章
[Lu, Xin]的文章
[Xie, Bo]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。