Copper Phosphide-Enhanced Lower Charge Trapping Occurrence in Graphitic-C3N4 for Efficient Noble-Metal-Free Photocatalytic H-2 Evolution

doi:10.1021/acsami.9b01421

	Copper Phosphide-Enhanced Lower Charge Trapping Occurrence in Graphitic-C3N4 for Efficient Noble-Metal-Free Photocatalytic H-2 Evolution
	Wang, Wenchao 1,2; Zhao, Xiaolong 1; Cao, Yingnan 1; Yan, Zhiping 2; Zhu, Ruixue2,3 ; Tao, Ying 1; Chen, Xiaolang 1; Zhang, Dieqing 1; Li, Guisheng 1; Phillips, David Lee 2
	2019-05-08
发表期刊	ACS APPLIED MATERIALS & INTERFACES
ISSN	1944-8244
卷号	11 期号:18 页码:16527-16537
发表状态	已发表
DOI	10.1021/acsami.9b01421
摘要	Graphitic carbon nitride (g-C3N4) fundamental photophysical processes exhibit a high frequency of charge trapping due to physicochemical defects. In this study, a copper phosphide (Cu3P) and g-C3N4 hybrid was synthesized via a facile phosphorization method. Cu3P, as an electron acceptor, efficiently captures the photogenerated electrons and drastically improved the charge separation rate to cause a significantly enhanced photocatalytic performance. Moreover, the robust and intimate chemical interactions between Cu3P and g-C3N4 offers a rectified charge-transfer channel that can lead to a higher H-2 evolution rate (HRE, 277.2 mu mol h(-1) g(-1)) for this hybrid that is up to 370 times greater than that achieved from using bare g-C3N4 (HRE, 0.75 mu mol h(-1) g(-1)) with a quantum efficiency of 3.74% under visible light irradiation (lambda = 420 nm). To better determine the photophysical characteristics of the Cu3P-induced charge antitrapping behavior, ultrafast time-resolved spectroscopy measurements were used to investigate the charge carriers' dynamics from femtosecond to nanosecond time domains. The experimental results clearly revealed that Cu3P can effectively enhance charge transfer and suppress photoelectron-hole recombination.
关键词	g-C3N4 Cu3P photocatalysis H-2 evolution charge trapping time-resolved spectroscopy
收录类别	SCI ; SCIE ; EI
语种	英语
资助项目	UGC Special Equipment Grant[SEG-HKU-07]
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号	WOS:000467781100028
出版者	AMER CHEMICAL SOC
EI入藏号	20192006920082
EI主题词	Carbon nitride ; Charge transfer ; Charge trapping ; Laser spectroscopy ; Photocatalysis ; Precious metals ; Time domain analysis
EI分类号	Precious Metals:547.1 ; Optical Devices and Systems:741.3 ; Chemical Reactions:802.2 ; Mathematics:921 ; Atomic and Molecular Physics:931.3
WOS关键词	CARBON NITRIDE SEMICONDUCTORS ; HYDROGEN EVOLUTION ; HIGH-PERFORMANCE ; DEGRADATION ; REDUCTION ; TIO2 ; HETEROJUNCTION ; NANOPARTICLES ; NANOSPHERES ; NANOSHEETS
原始文献类型	Article
引用统计
文献类型	期刊论文
条目标识符	https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/40886
专题	硬x射线自由电子激光装置项目物质科学与技术学院
通讯作者	Zhu, Ruixue; Li, Guisheng; Phillips, David Lee
作者单位	1.Shanghai Normal Univ, Shanghai Key Lab Rare Earth Funct Mat, Key & Int Joint Lab Resource Chem, Educ Minist, Shanghai 200234, Peoples R China 2.Univ Hong Kong, Dept Chem, Pokfulam Rd, Hong Kong, Peoples R China 3.Shanghai Tech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
通讯作者单位	物质科学与技术学院
推荐引用方式 GB/T 7714	Wang, Wenchao,Zhao, Xiaolong,Cao, Yingnan,et al. Copper Phosphide-Enhanced Lower Charge Trapping Occurrence in Graphitic-C3N4 for Efficient Noble-Metal-Free Photocatalytic H-2 Evolution[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(18):16527-16537.
APA	Wang, Wenchao.,Zhao, Xiaolong.,Cao, Yingnan.,Yan, Zhiping.,Zhu, Ruixue.,...&Phillips, David Lee.(2019).Copper Phosphide-Enhanced Lower Charge Trapping Occurrence in Graphitic-C3N4 for Efficient Noble-Metal-Free Photocatalytic H-2 Evolution.ACS APPLIED MATERIALS & INTERFACES,11(18),16527-16537.
MLA	Wang, Wenchao,et al."Copper Phosphide-Enhanced Lower Charge Trapping Occurrence in Graphitic-C3N4 for Efficient Noble-Metal-Free Photocatalytic H-2 Evolution".ACS APPLIED MATERIALS & INTERFACES 11.18(2019):16527-16537.