Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates
Xu, Houqiang1,2; Jiang, Jie'an1,2,3; Sheikhi, Moheb1,2; Chen, Zhaoying4; Hoo, Jason4; Guo, Shiping4; Guo, Wei1,2; Sun, Haiding5; Ye, Jichun1,2
2019-05
发表期刊SUPERLATTICES AND MICROSTRUCTURES
ISSN0749-6036
卷号129页码:20-27
发表状态已发表
DOI10.1016/j.spmi.2019.03.010
摘要

Deep ultraviolet (DUV) Al(x)Gal(-x)N/AlyGa1-yN-based multiple quantum wells (MQWs) were grown on sapphire substrates with miscut angles of 0.2 degrees and 4 degrees. Significantly reduced edge type dislocation density and in-plane anisotropy of dislocation distributions were demonstrated for MQWs grown on high miscut sapphire substrate. Up to 10-fold enhanced MQW emission was observed for MQWs grown on 4 degrees miscut sapphire compared to that grown on 0.2 degrees miscut sapphire, and internal quantum efficiency (IQE) as large as 88% was achieved. Compositional in homogeneity and thus formation of potential minimum were ambiguously demonstrated by localized cathodoluminescence spectra across the step bunched surface of the MQW sample. However, from the macroscale point of view, single peak PL luminescence was shown for MQW grown on high miscut sapphire without peak separation, suggesting a strongly carrier localization effect. A three-dimensional atom diffusion and desorption model describing the MQW growth was also proposed. This work provides a promising approach towards the realization of highly-efficient DUV emitters.

关键词AlGaN Multiple quantum wells Step-bunches Photoluminescence Internal quantum efficiency
收录类别SCI ; SCIE ; EI
语种英语
资助项目Zhejiang Provincial Natural Science Foundation[LY15F040003]
WOS研究方向Physics
WOS类目Physics, Condensed Matter
WOS记录号WOS:000467670300003
出版者ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
EI入藏号20191206665233
EI主题词Aluminum alloys ; Aluminum gallium nitride ; Efficiency ; Gallium alloys ; III-V semiconductors ; Photoluminescence ; Sapphire ; Semiconductor alloys ; Semiconductor quantum wells ; Substrates
EI分类号Gems:482.2.1 ; Aluminum Alloys:541.2 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Inorganic Compounds:804.2 ; Production Engineering:913.1 ; Quantum Theory ; Quantum Mechanics:931.4
WOS关键词SURFACE-MORPHOLOGY ; GAN FILMS ; KINETICS ; QUALITY ; TERNARY ; INGAN ; BLUE
原始文献类型Article
引用统计
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/40849
专题物质科学与技术学院_硕士生
物质科学与技术学院_博士生
共同第一作者Jiang, Jie'an
通讯作者Guo, Wei; Sun, Haiding; Ye, Jichun
作者单位1.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
3.ShanghaiTech Univ, Shanghai 201210, Peoples R China
4.Adv Microfabricat Equipment Inc, Shanghai 201201, Peoples R China
5.Univ Sci & Technol China, Sch Microelect, Hefei 230026, Anhui, Peoples R China
推荐引用方式
GB/T 7714
Xu, Houqiang,Jiang, Jie'an,Sheikhi, Moheb,et al. Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates[J]. SUPERLATTICES AND MICROSTRUCTURES,2019,129:20-27.
APA Xu, Houqiang.,Jiang, Jie'an.,Sheikhi, Moheb.,Chen, Zhaoying.,Hoo, Jason.,...&Ye, Jichun.(2019).Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates.SUPERLATTICES AND MICROSTRUCTURES,129,20-27.
MLA Xu, Houqiang,et al."Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates".SUPERLATTICES AND MICROSTRUCTURES 129(2019):20-27.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
个性服务
查看访问统计
谷歌学术
谷歌学术中相似的文章
[Xu, Houqiang]的文章
[Jiang, Jie'an]的文章
[Sheikhi, Moheb]的文章
百度学术
百度学术中相似的文章
[Xu, Houqiang]的文章
[Jiang, Jie'an]的文章
[Sheikhi, Moheb]的文章
必应学术
必应学术中相似的文章
[Xu, Houqiang]的文章
[Jiang, Jie'an]的文章
[Sheikhi, Moheb]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。