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Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates | |
Xu, Houqiang1,2; Jiang, Jie'an1,2,3; Sheikhi, Moheb1,2; Chen, Zhaoying4; Hoo, Jason4; Guo, Shiping4; Guo, Wei1,2; Sun, Haiding5; Ye, Jichun1,2 | |
2019-05 | |
发表期刊 | SUPERLATTICES AND MICROSTRUCTURES |
ISSN | 0749-6036 |
卷号 | 129页码:20-27 |
发表状态 | 已发表 |
DOI | 10.1016/j.spmi.2019.03.010 |
摘要 | Deep ultraviolet (DUV) Al(x)Gal(-x)N/AlyGa1-yN-based multiple quantum wells (MQWs) were grown on sapphire substrates with miscut angles of 0.2 degrees and 4 degrees. Significantly reduced edge type dislocation density and in-plane anisotropy of dislocation distributions were demonstrated for MQWs grown on high miscut sapphire substrate. Up to 10-fold enhanced MQW emission was observed for MQWs grown on 4 degrees miscut sapphire compared to that grown on 0.2 degrees miscut sapphire, and internal quantum efficiency (IQE) as large as 88% was achieved. Compositional in homogeneity and thus formation of potential minimum were ambiguously demonstrated by localized cathodoluminescence spectra across the step bunched surface of the MQW sample. However, from the macroscale point of view, single peak PL luminescence was shown for MQW grown on high miscut sapphire without peak separation, suggesting a strongly carrier localization effect. A three-dimensional atom diffusion and desorption model describing the MQW growth was also proposed. This work provides a promising approach towards the realization of highly-efficient DUV emitters. |
关键词 | AlGaN Multiple quantum wells Step-bunches Photoluminescence Internal quantum efficiency |
收录类别 | SCI ; SCIE ; EI |
语种 | 英语 |
资助项目 | Zhejiang Provincial Natural Science Foundation[LY15F040003] |
WOS研究方向 | Physics |
WOS类目 | Physics, Condensed Matter |
WOS记录号 | WOS:000467670300003 |
出版者 | ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD |
EI入藏号 | 20191206665233 |
EI主题词 | Aluminum alloys ; Aluminum gallium nitride ; Efficiency ; Gallium alloys ; III-V semiconductors ; Photoluminescence ; Sapphire ; Semiconductor alloys ; Semiconductor quantum wells ; Substrates |
EI分类号 | Gems:482.2.1 ; Aluminum Alloys:541.2 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Inorganic Compounds:804.2 ; Production Engineering:913.1 ; Quantum Theory ; Quantum Mechanics:931.4 |
WOS关键词 | SURFACE-MORPHOLOGY ; GAN FILMS ; KINETICS ; QUALITY ; TERNARY ; INGAN ; BLUE |
原始文献类型 | Article |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/40849 |
专题 | 物质科学与技术学院_硕士生 物质科学与技术学院_博士生 |
共同第一作者 | Jiang, Jie'an |
通讯作者 | Guo, Wei; Sun, Haiding; Ye, Jichun |
作者单位 | 1.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.ShanghaiTech Univ, Shanghai 201210, Peoples R China 4.Adv Microfabricat Equipment Inc, Shanghai 201201, Peoples R China 5.Univ Sci & Technol China, Sch Microelect, Hefei 230026, Anhui, Peoples R China |
推荐引用方式 GB/T 7714 | Xu, Houqiang,Jiang, Jie'an,Sheikhi, Moheb,et al. Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates[J]. SUPERLATTICES AND MICROSTRUCTURES,2019,129:20-27. |
APA | Xu, Houqiang.,Jiang, Jie'an.,Sheikhi, Moheb.,Chen, Zhaoying.,Hoo, Jason.,...&Ye, Jichun.(2019).Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates.SUPERLATTICES AND MICROSTRUCTURES,129,20-27. |
MLA | Xu, Houqiang,et al."Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates".SUPERLATTICES AND MICROSTRUCTURES 129(2019):20-27. |
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