Voltage-Controlled Magnetoelectric Devices for Neuromorphic Diffusion Process
2024-07-17
状态已发表
摘要

Stochastic diffusion processes are pervasive in nature, from the seemingly erratic Brownian motion to the complex interactions of synaptically-coupled spiking neurons. Recently, drawing inspiration from Langevin dynamics, neuromorphic diffusion models were proposed and have become one of the major breakthroughs in the field of generative artificial intelligence. Unlike discriminative models that have been well developed to tackle classification or regression tasks, diffusion models as well as other generative models such as ChatGPT aim at creating content based upon contexts learned. However, the more complex algorithms of these models result in high computational costs using today's technologies, creating a bottleneck in their efficiency, and impeding further development. Here, we develop a spintronic voltage-controlled magnetoelectric memory hardware for the neuromorphic diffusion process. The in-memory computing capability of our spintronic devices goes beyond current Von Neumann architecture, where memory and computing units are separated. Together with the non-volatility of magnetic memory, we can achieve high-speed and low-cost computing, which is desirable for the increasing scale of generative models in the current era. We experimentally demonstrate that the hardware-based true random diffusion process can be implemented for image generation and achieve comparable image quality to software-based training as measured by the Frechet inception distance (FID) score, achieving ~103 better energy-per-bit-per-area over traditional hardware.

DOIarXiv:2407.12261
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出处Arxiv
WOS记录号PPRN:90872517
WOS类目Computer Science, Artificial Intelligence ; Computer Science, Information Systems ; Computer Science, Interdisciplinary Applications ; Physics, Applied
文献类型预印本
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/408334
专题信息科学与技术学院
信息科学与技术学院_PI研究组_寇煦丰组
信息科学与技术学院_硕士生
通讯作者Cheng, Yang; Wang, Kang L.
作者单位
1.Univ Calif Los Angeles, Dept Elect & Comp Engn, Los Angeles, CA 90095, USA
2.Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095, USA
3.Ohio State Univ, Dept Phys, Columbus, OH, USA
4.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai, Peoples R China
5.Univ Calif Riverside, Dept Phys & Astron, Riverside, CA, USA
6.Ind Technol Res Inst, Hsinchu, Taiwan
7.Univ Calif Riverside, Dept Elect & Comp Engn, Riverside, CA, USA
8.ShanghaiTech Univ, ShanghaiTech Lab Topol Phys, Shanghai, Peoples R China
推荐引用方式
GB/T 7714
Cheng, Yang,Shu, Qingyuan,Lee, Albert,et al. Voltage-Controlled Magnetoelectric Devices for Neuromorphic Diffusion Process. 2024.
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