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| Coverage-driven phase transition of copper silicide monolayer on Si (111) | |
| 2019-05 | |
| 发表期刊 | ULTRAMICROSCOPY (IF:2.1[JCR-2023],2.3[5-Year]) |
| ISSN | 0304-3991 |
| 卷号 | 200页码:39-42 |
| 发表状态 | 已发表 |
| DOI | 10.1016/j.ultramic.2019.02.019 |
| 摘要 | The characterization and control of atomic substitution process is crucial in fabricating high-quality two-dimensional layered compound materials and tuning their physical properties. With intensity-voltage low energy electron microscopy (IV-LEEM), we found that the concentration of copper in the topmost copper silicide monolayer on Si (111) substrates varies gradually from 1.7 to 1.0 ML while preserving it's unique '5 x 5' incommensurate phase in a transition region as large as 1000 nm. This gradual variation of the copper concentration is due to the incomplete substitution of the Si with Cu, as revealed by atomic-resolved scanning tunneling microscopy with a tip that nicely resolved the '5 x 5' periodicity. Our experiments indicate that besides the widely-accepted phase of Cu2Si with both substitutional and interstitial Cu atoms, another type of precursor copper silicide CuSi3 with only interstitial Cu atoms also plays important roles in the substitutional diffusion and reaction processes during the formation of the topmost copper silicide monolayer. This precursor phase might exist in the growth of other two-dimensional layered materials with potential applications in integrated optoelectronics, spintronics or low dissipative devices. |
| 关键词 | Copper silicide Low energy electron microscopy (LEEM) Intensity-voltage (I-V) Substitution Interstitial atoms Scanning tunneling microscopy (STM) |
| 收录类别 | SCI ; SCIE ; CPCI ; EI |
| 语种 | 英语 |
| 资助项目 | Science and Technology Innovation Projects at Chongqing University[0211005202084] |
| WOS研究方向 | Microscopy |
| WOS类目 | Microscopy |
| WOS记录号 | WOS:000465417500006 |
| 出版者 | ELSEVIER SCIENCE BV |
| EI入藏号 | 20190906559613 |
| EI主题词 | Atoms ; Electron microscopes ; Electrons ; Integrated optoelectronics ; Monolayers ; Scanning electron microscopy ; Scanning tunneling microscopy ; Silicides ; Silicon ; Substitution reactions |
| EI分类号 | Copper:544.1 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3 |
| WOS关键词 | ELECTRON-MICROSCOPE ; SURFACE-STRUCTURE ; ATOMIC-STRUCTURE ; CU/SI(111) ; GROWTH ; LEED |
| 原始文献类型 | Article ; Proceedings Paper |
| 引用统计 | 正在获取...
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| 文献类型 | 期刊论文 |
| 条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/40814 |
| 专题 | 大科学中心_PI研究组_万唯实组 物质科学与技术学院 大科学中心 |
| 通讯作者 | Wei, Zheng |
| 作者单位 | 1.Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China 2.Chongqing Univ, Coll Chem & Chem Engn, Chongqing 400031, Peoples R China 3.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhu, Lin,Wei, Zheng,Shi, Guodong,et al. Coverage-driven phase transition of copper silicide monolayer on Si (111)[J]. ULTRAMICROSCOPY,2019,200:39-42. |
| APA | Zhu, Lin.,Wei, Zheng.,Shi, Guodong.,Shang, Bo.,Li, Meng.,...&Tang, Wen-Xin.(2019).Coverage-driven phase transition of copper silicide monolayer on Si (111).ULTRAMICROSCOPY,200,39-42. |
| MLA | Zhu, Lin,et al."Coverage-driven phase transition of copper silicide monolayer on Si (111)".ULTRAMICROSCOPY 200(2019):39-42. |
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