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Strain distribution in the active region of InAs-based interband cascade laser
2024-06-28
发表期刊JOURNAL OF APPLIED PHYSICS (IF:2.7[JCR-2023],2.6[5-Year])
ISSN0021-8979
EISSN1089-7550
卷号135期号:24
发表状态已发表
DOI10.1063/5.0212524
摘要

Energy-dispersive x-ray spectroscopy and high-angle annular dark-field in a Cs-corrected scanning transmission electron microscope are employed to characterize the atomic-scale strain distribution in the active region of the InAs-based interband cascade laser. For the first time, energy-dispersive x-ray spectroscopy is utilized for the quantitative calculation of the zero-strain region, by which the geometric phase analysis of high-angle annular dark-field imaging has been carried out. The strain distribution of the active region with high accuracy has been obtained. The analysis of the out-of-plane strain shows that the active region in the InAs-based interband cascade laser is strain-compensated, while a certain degree of elemental intermixing still exists in the active region. This detailed strain distribution can provide valuable insights into the optimization of the growth conditions for the active region such as growth temperature, V/III flux ratio, and growth process to minimize the elemental intermixing and obtain a better performance interface while maintaining the strain-compensated state. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

关键词Energy dispersive spectroscopy III-V semiconductors Interface states Strain Transmission electron microscopy Active regions Atomic scale Energy dispersive X ray spectroscopy Energy dispersive x-ray spectroscopy High-angle annular dark fields Interband cascade laser Scanning transmission electron microscopes Strain distributions Strain-compensated Time energy
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收录类别SCI ; EI
语种英语
资助项目National Key Research and Development Program of China[2021YFB2800500]
WOS研究方向Physics
WOS类目Physics, Applied
WOS记录号WOS:001257947800008
出版者AIP Publishing
EI入藏号20242716607210
EI主题词Indium arsenide
EI分类号712.1 Semiconducting Materials ; 804.2 Inorganic Compounds ; 931 Classical Physics ; Quantum Theory ; Relativity ; 932 High Energy Physics ; Nuclear Physics ; Plasma Physics ; 951 Materials Science
原始文献类型Journal article (JA)
文献类型期刊论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/401431
专题信息科学与技术学院
信息科学与技术学院_特聘教授组_龚谦组
信息科学与技术学院_硕士生
信息科学与技术学院_博士生
通讯作者Gong, Qian
作者单位
1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Natl Key Lab Mat Integrated Circuits, Shanghai 200050, Peoples R China
2.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
3.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
第一作者单位信息科学与技术学院
通讯作者单位信息科学与技术学院
推荐引用方式
GB/T 7714
Wu, Jian-Chu,Liu, Ruo-Tao,Du, An-Tian,et al. Strain distribution in the active region of InAs-based interband cascade laser[J]. JOURNAL OF APPLIED PHYSICS,2024,135(24).
APA Wu, Jian-Chu.,Liu, Ruo-Tao.,Du, An-Tian.,Wang, Kun.,Cao, Chun-Fang.,...&Gong, Qian.(2024).Strain distribution in the active region of InAs-based interband cascade laser.JOURNAL OF APPLIED PHYSICS,135(24).
MLA Wu, Jian-Chu,et al."Strain distribution in the active region of InAs-based interband cascade laser".JOURNAL OF APPLIED PHYSICS 135.24(2024).
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