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ShanghaiTech University Knowledge Management System
Strain distribution in the active region of InAs-based interband cascade laser | |
2024-06-28 | |
发表期刊 | JOURNAL OF APPLIED PHYSICS (IF:2.7[JCR-2023],2.6[5-Year]) |
ISSN | 0021-8979 |
EISSN | 1089-7550 |
卷号 | 135期号:24 |
发表状态 | 已发表 |
DOI | 10.1063/5.0212524 |
摘要 | Energy-dispersive x-ray spectroscopy and high-angle annular dark-field in a Cs-corrected scanning transmission electron microscope are employed to characterize the atomic-scale strain distribution in the active region of the InAs-based interband cascade laser. For the first time, energy-dispersive x-ray spectroscopy is utilized for the quantitative calculation of the zero-strain region, by which the geometric phase analysis of high-angle annular dark-field imaging has been carried out. The strain distribution of the active region with high accuracy has been obtained. The analysis of the out-of-plane strain shows that the active region in the InAs-based interband cascade laser is strain-compensated, while a certain degree of elemental intermixing still exists in the active region. This detailed strain distribution can provide valuable insights into the optimization of the growth conditions for the active region such as growth temperature, V/III flux ratio, and growth process to minimize the elemental intermixing and obtain a better performance interface while maintaining the strain-compensated state. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
关键词 | Energy dispersive spectroscopy III-V semiconductors Interface states Strain Transmission electron microscopy Active regions Atomic scale Energy dispersive X ray spectroscopy Energy dispersive x-ray spectroscopy High-angle annular dark fields Interband cascade laser Scanning transmission electron microscopes Strain distributions Strain-compensated Time energy |
URL | 查看原文 |
收录类别 | SCI ; EI |
语种 | 英语 |
资助项目 | National Key Research and Development Program of China[2021YFB2800500] |
WOS研究方向 | Physics |
WOS类目 | Physics, Applied |
WOS记录号 | WOS:001257947800008 |
出版者 | AIP Publishing |
EI入藏号 | 20242716607210 |
EI主题词 | Indium arsenide |
EI分类号 | 712.1 Semiconducting Materials ; 804.2 Inorganic Compounds ; 931 Classical Physics ; Quantum Theory ; Relativity ; 932 High Energy Physics ; Nuclear Physics ; Plasma Physics ; 951 Materials Science |
原始文献类型 | Journal article (JA) |
文献类型 | 期刊论文 |
条目标识符 | https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/401431 |
专题 | 信息科学与技术学院 信息科学与技术学院_特聘教授组_龚谦组 信息科学与技术学院_硕士生 信息科学与技术学院_博士生 |
通讯作者 | Gong, Qian |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Natl Key Lab Mat Integrated Circuits, Shanghai 200050, Peoples R China 2.ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China 3.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China |
第一作者单位 | 信息科学与技术学院 |
通讯作者单位 | 信息科学与技术学院 |
推荐引用方式 GB/T 7714 | Wu, Jian-Chu,Liu, Ruo-Tao,Du, An-Tian,et al. Strain distribution in the active region of InAs-based interband cascade laser[J]. JOURNAL OF APPLIED PHYSICS,2024,135(24). |
APA | Wu, Jian-Chu.,Liu, Ruo-Tao.,Du, An-Tian.,Wang, Kun.,Cao, Chun-Fang.,...&Gong, Qian.(2024).Strain distribution in the active region of InAs-based interband cascade laser.JOURNAL OF APPLIED PHYSICS,135(24). |
MLA | Wu, Jian-Chu,et al."Strain distribution in the active region of InAs-based interband cascade laser".JOURNAL OF APPLIED PHYSICS 135.24(2024). |
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