上海科技大学知识管理系统

本发明公开了一种用于低温计算的高效能存储器，其特征在于，包括若干存储器组，每个存储器组包括一个CSDB-GC宏模块、通用地址译码器和不同地址译码器，CSDB-GC宏模块包括若干列本地块，每个本地块包括若干个CSDB-GC存储器单元。芯片最终测量结果表明，该16Kb CSDB-eDRAM实现了16.67秒的数据保留时间，该结果相较于4.2K条件下最先进的低温eDRAM工作提升了2.6倍，并实现了更低的刷新功耗(0.11pW//Kb)。此外，它还实现了710ps(1.41GHz)的更快访问时间。与最先进的工作相比，其动态功耗开销最低，为49.23uW//Kb。

Disclosed in the present invention is a high-efficiency memory used for cryogenic computing, characterized by comprising a plurality of memory groups. Each memory group comprises a CSDB-GC macro module, a universal address decoder and a different address decoder, the CSDB-GC macro module comprising a plurality of columns of local blocks, and each local block comprising a plurality of CSDB-GC memory cells. A final chip measurement result shows that the 16Kb CSDB-eDRAM realizes a data retention time of 16.67 seconds, the result representing a 2.6-fold increase compared with that of the most advanced cryogenic eDRAM work at 4.2K, achieves a lower refresh power consumption of 0.11pW//Kb, further achieves a faster access time of 710ps (1.41GHz), and, compared with the most advanced work, has the lowest dynamic power consumption overhead of 49.23uW//Kb.