Thickness Dependence of Unidirectional Magnetoresistance in Co2MnGa Films
2024-05-10
会议录名称2024 IEEE INTERNATIONAL MAGNETIC CONFERENCE - SHORT PAPERS (INTERMAG SHORT PAPERS)
发表状态已发表
DOI10.1109/INTERMAGShortPapers61879.2024.10576905
摘要

With intrinsic giant anomalous Hall and Nernst effects, Weyl ferromagnet C02MnGa stands as an ideal candidate for exploring efficient charge-to-spin conversions. In this work, by utilizing the high-quality epitaxial C02MnGa single films, we observed a sizable unidirectional magnetoresistance. Surprisingly, the isotropic crystallographic axis dependence of unidirectional magnetoresistance, together with its linear scaling to the C02MnGa thickness, neither can be explained by the conventional spin current drift-diffusion process. By employing heat equation, we analytically derived the current induced vertical temperature gradient, and unambiguously show the thickness dependence of unidirectional magnetoresistance induced by anomalous Nernst effects. Our work provides direct evidences of thermoelectric voltages in the nonlinear transport that may be extended to other material systems as well.

关键词Cobalt alloys Gallium alloys Magnetoresistance Ternary alloys Anomalous hall effects Anomalous nernst effect Crystallographic axes Ferromagnets High quality Isotropics Nernst effect Spin conversion Thickness dependence Unidirectional magnetoresistance
会议名称2024 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2024
会议地点Rio de Janeiro, Brazil
会议日期5-10 May 2024
URL查看原文
收录类别EI
语种英语
出版者Institute of Electrical and Electronics Engineers Inc.
EI入藏号20243016734498
EI主题词Manganese alloys
EI分类号543.2 Manganese and Alloys ; 549.3 Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals ; 701.2 Magnetism: Basic Concepts and Phenomena
原始文献类型Conference article (CA)
来源库IEEE
文献类型会议论文
条目标识符https://kms.shanghaitech.edu.cn/handle/2MSLDSTB/398603
专题信息科学与技术学院
信息科学与技术学院_硕士生
信息科学与技术学院_博士生
信息科学与技术学院_PI研究组_杨雨梦组
作者单位
1.School of Information Science and Technology, ShanghaiTech University, Shanghai, China
2.Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, ShanghaiTech University, Shanghai, China
3.Department of Electrical and Computer Engineering, National University of Singapore, Singapore
4.Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), TD Lee institute, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
5.Hefei National Laboratory, Hefei, China
6.Shanghai Research Center for Quantum Sciences, Shanghai, China
第一作者单位信息科学与技术学院;  上海科技大学
第一作者的第一单位信息科学与技术学院
推荐引用方式
GB/T 7714
Bin Rong,Lizhu Ren,Hongsheng Zheng,et al. Thickness Dependence of Unidirectional Magnetoresistance in Co2MnGa Films[C]:Institute of Electrical and Electronics Engineers Inc.,2024.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
个性服务
查看访问统计
谷歌学术
谷歌学术中相似的文章
[Bin Rong]的文章
[Lizhu Ren]的文章
[Hongsheng Zheng]的文章
百度学术
百度学术中相似的文章
[Bin Rong]的文章
[Lizhu Ren]的文章
[Hongsheng Zheng]的文章
必应学术
必应学术中相似的文章
[Bin Rong]的文章
[Lizhu Ren]的文章
[Hongsheng Zheng]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。